|
|
Número de pieza | IRGPH20S | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | IRF | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRGPH20S (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Previous Datasheet
Index
Next Data Sheet
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1138
IRGPH20S
Standard Speed IGBT
Features
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
See Fig. 1 for Current vs. Frequency curve
C
G
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
VCES = 1200V
VCE(sat) ≤ 3.3V
@VGE = 15V, IC = 6.6A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
TO-247AC
Max.
1200
10
6.6
20
20
±20
5.0
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-39
Min.
—
—
—
—
Typ.
—
0.24
—
6 (0.21)
Max.
2.1
—
40
—
Units
°C/W
g (oz)
Revision 0
To Order
1 page Previous Datasheet
Index
Next Data Sheet
IRGPH20S
600
V GE = 0V,
f = 1MHz
Cies = Cge + C gc , Cce SHORTED
500
Cres = C gc
Coes = Cce + C gc
400 Cies
300
Coes
200
100
Cres
0A
1 10 100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
5.60
VCC = 960V
VGE = 15V
TC = 25°C
5.56 I C = 6.6A
5.52
5.48
5.44
5.40
0
10 20 30 40 50
RG , Gate Resistance (Ω)
A
60
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
VCE = 400V
IC = 6.6A
16
12
8
4
0
0 4 8 12 16
Qg , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
A
20
100
RG = 50Ω
VGE = 15V
VCC = 960V
10
IC = 10A
I C = 6.6A
IC = 3.3A
1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TC, Case Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-43
To Order
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet IRGPH20S.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRGPH20M | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
IRGPH20S | INSULATED GATE BIPOLAR TRANSISTOR | IRF |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |