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Datasheet MBN400GR12AW Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MBN400GR12AW | IGBT Module IGBT MODU ODULE
MBN400GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
E E G
C
Weight: 480 (g)
TERM |  Hitachi | igbt |
MBN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MBN1200D25B | Silicon N-Channel IGBT IGBT MODULE
MBN1200D25B
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to Hitachi igbt | | |
| 2 | MBN1200D33A | Silicon N-Channel IGBT IGBT MODULE
MBN1200D33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to Hitachi igbt | | |
| 3 | MBN1200GS12AW | Silicon N-Channel IGBT IGBT MODU ODULE
MBN1200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
130 110 4- φ 6.5
Unit in mm
2-M4
19.5 27.5
FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to bas Hitachi igbt | | |
| 4 | MBN400A6 | IGBT Module Range Hitachi igbt | | |
| 5 | MBN400C20 | IGBT Module / Silicon N Channel IGBT IGBT MODULE
MBN400C20
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to lo Hitachi igbt | | |
| 6 | MBN400C33A | IGBT Module / Silicon N Channel IGBT IGBT MODULE
MBN400C33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to l Hitachi igbt | | |
| 7 | MBN400GR12 | IGBT Module Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99026(R1)
MBN400GR12
[Rated 400A/1200V, Single-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) Hitachi igbt | |
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