(PDF) HAT2096H Datasheet - Silicon N Channel Power MOS FET

Número de pieza	HAT2096H
Descripción	Silicon N Channel Power MOS FET
Fabricantes	Hitachi
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No Preview Available ! HAT2096H Silicon N Channel Power MOS FET Power Switching Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 4.2 mΩ typ. (at V GS = 10 V) Outline LFPAK 5 D 4 G SSS 12 3 ADE-208-1431B (Z) 3rd. Edition Aug. 2002 5 1 234 1, 2, 3 Source 4 Gate 5 Drain 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 Pulse Test 0.16 0.12 0.08 0.04 0 I D = 10 A 5A 2A 4 8 12 16 20 Gate to Source Voltage V GS (V) HAT2096H Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4.5 V 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 I D = 2 A, 5 A, 10 A 8 V GS = 4.5 V 4 10 V 2 A, 5 A, 10 A 0 -40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = -25°C 10 75°C 25°C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) Rev.2, Aug. 2002, page 5 of 10 5 Page

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PDF HAT2096H Data sheet ( Hoja de datos )