DataSheet.es    


Datasheet IRG4PH40UD2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRG4PH40UD2Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
IRF
IRF
transistor
2IRG4PH40UD2-EInsulated Gate Bipolar Transistor

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery an
IRF
IRF
transistor
3IRG4PH40UD2-EPInsulated Gate Bipolar Transistor

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads • Lead-Free
IRF
IRF
transistor
4IRG4PH40UD2PBFInsulated Gate Bipolar Transistor

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency t
IRF
IRF
transistor


IRG Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRG41BC10UDPBFInsulated Gate Bipolar Transistor

PD - 95603 IRG4IBC10UDPbF • Lead-Free www.irf.com 1 7/28/04 IRG4IBC10UDPbF 2 www.irf.com IRG4IBC10UDPbF www.irf.com 3 IRG4IBC10UDPbF 4 www.irf.com IRG4IBC10UDPbF www.irf.com 5 IRG4IBC10UDPbF 6 www.irf.com IRG4IBC10UD
International Rectifier
International Rectifier
transistor
2IRG41BC30UDUltra Fast CoPack IGBT

PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-p
International Rectifier
International Rectifier
igbt
3IRG4BC10KShort Circuit Rated UltraFast IGBT

PD - 91733A IRG4BC10K INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3
International Rectifier
International Rectifier
igbt
4IRG4BC10KDINSULATED GATE BIPOLAR TRANSISTOR

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed •
International Rectifier
International Rectifier
transistor
5IRG4BC10KDPBFHEXFET Power MOSFET

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losse
International Rectifier
International Rectifier
mosfet
6IRG4BC10SINSULATED GATE BIPOLAR TRANSISTOR

PD - 91786A IRG4BC10S INSULATED GATE BIPOLAR TRANSISTOR Features • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications �
International Rectifier
International Rectifier
transistor
7IRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR

PD - 94255 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vc
International Rectifier
International Rectifier
transistor



Esta página es del resultado de búsqueda del IRG4PH40UD2. Si pulsa el resultado de búsqueda de IRG4PH40UD2 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap