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PDF STW6NB100 Data sheet ( Hoja de datos )

Número de pieza STW6NB100
Descripción N-CHANNEL MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STW6NB100 Hoja de datos, Descripción, Manual

® STW6NB100
N - CHANNEL 1000V - 2.3- 5.4A - TO-247
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
S TW 6NB1 00
1000 V < 2.8
5.4 A
s TYPICAL RDS(on) = 2.3
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage technology,
STMicroelectronics has designed an advanced
family of power Mosfets with outstanding
performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Voltage (VGS = 0)
V DGR
VGS
ID
ID
IDM()
Ptot
Drain- gat e Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating F actor
dv/dt( 1) Peak Diode Recovery voltage slope
Ts tg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
October 1999
Va l u e
Un it
1000
V
1000
V
± 30
V
5.4 A
3.4 A
21 A
160
1.28
W
W /o C
4 V/ns
-65 to 150
oC
150 oC
( 1) ISD 5.4 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8

1 page




STW6NB100 pdf
Normalized Gate Threshold Voltage vs
Temperature
STW6NB100
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8

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