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PDF STB60NE06-16 Data sheet ( Hoja de datos )
| Número de pieza | STB60NE06-16 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STB60NE06-16
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE
STB60NE06-1
V DSS
60 V
RDS(on)
< 0.016 Ω
ID
60 A
s TYPICAL RDS(on) = 0.013 Ω
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ” Single Feature Size™ ”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VD GR
VGS
ID
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dV/dt(1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
Value
Uni t
60 V
60 V
± 20
V
60 A
42 A
240 A
150 W
1 W/oC
6
-65 to 175
175
(1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
V/ ns
oC
oC
1/9
1 page  
Capacitance Variations
STB60NE06-16
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB60NE06-16.PDF ] | |
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