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Número de pieza | STB60NH02L | |
Descripción | N-CHANNEL Power MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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No Preview Available ! STB60NH02L
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK
STripFET™ III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < 0.0105 Ω 60 A
s TYPICAL RDS(on) = 0.0085 Ω @ 10 V
s TYPICAL RDS(on) = 0.012 Ω @ 5 V
s RDS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
The STB60NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB60NH02LT4
MARKING
B60NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(2)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (3) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
September 2003
PACKAGE
TO-263
Value
30
24
24
± 20
60
43
240
70
0.47
280
-55 to 175
PACKAGING
TAPE & REEL
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
1 page STB60NH02L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
..
5/11
5 Page STB60NH02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
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11/11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet STB60NH02L.PDF ] |
Número de pieza | Descripción | Fabricantes |
STB60NH02L | N-CHANNEL Power MOSFET | ST Microelectronics |
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