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MC33170 の電気的特性と機能

MC33170のメーカーはON Semiconductorです、この部品の機能は「RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal」です。


製品の詳細 ( Datasheet PDF )

部品番号 MC33170
部品説明 RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MC33170 Datasheet, MC33170 PDF,ピン配置, 機能
MC33170
RF Amplifier Companion Chip
for Dual-Band Cellular
Subscriber Terminal
The MC33170 is a complete solution for drain modulated
dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers.
Thanks to its internal decoder, the MC33170 drastically simplifies the
interface between the PAs and the baseband logic section, providing
an immediate gain in part count but also in occupied copper area. The
device is also ready for 1V platforms since it accepts logic high control
signals down to 900mV@25°C.
A priority management system ensures the negative is present
before authorizing the power modulation, giving the necessary
ruggedness to the final design. This function can easily be disabled for
PAs not requiring a negative bias.
The device is able to directly drive an external P or N–channel with
the possibility to linearize the overall response via the internal
high–performance control amplifier and easily implement system
gain.
Finally, an LDO delivers a stable voltage, usable for external biasing
purposes.
1V platform compatible: ON voltage = 900mV, OFF voltage =
300mV max
Priority management system prevents power modulation before
negative bias establishes
High performance 4.5MHz gain–bandwidth product operational
amplifier
Drives N or P–channel MOSFET
2.5V low–noise LDO
Idle mode input for very low power consumption (standby mode)
http://onsemi.com
14
1
TSSOP–14
DTB SUFFIX
CASE 948G
PIN CONNECTIONS
Band Selection 1
Tx Enable 2
GSM-900 3
DCS-1800 4
PA Start-up 5
Gnd 6
Vbat 7
14 Common Enable
13
Negative
Regulator
12 Out
11 Vboost
10 INV
9 NINV
8 LDO
(Top View)
ORDERING INFORMATION
Device
Package
Shipping
MC33170DTB TSSOP–14 96 Units / Rail
MC33170DTBR2 TSSOP–14 2500 / Tape & Reel
LDO
Output 8
Shutdown
2.5 V
2.5 V
Low Dropout
2.5 V
Vbat
NINV Vboost Vbat (5.5 V Max)
9 11
7
Shutdown
Common
Enable 14
TX
Enable
Band
Selection
2
1
Open–Collector BG
Decoder BD
BG
1 mA
Continuous
700 mA
Peak
50 mA
NEGOK?
3 4 Continuous 5
GSM–900 DCS–1800 PA Start–Up
Clip
to –5 V
+
-
13 10
Negative INV
Regulator
6
12
Out
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 1
1
Publication Order Number:
MC33170/D

1 Page





MC33170 pdf, ピン配列
MC33170
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁMAXIMUM RATINGS
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁRating
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁBand selection
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁTx Enable
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁGSM–900
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁDCS–1800
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁPA Start–up
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁVbat
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNINV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁINV
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁBoost voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNegative regulation pin
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCommon Enable
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁESD capability, HBM model
ESD capability, Machine model
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSteering Switch, continuous output current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSteering Switch, continuous output current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁSteering Switch, peak output current < 1µs
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁMaximum power dissipation
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁNW suffix, plastic package @Tj=25°C
NW suffix, plastic package @Tj=85°C
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁThermal resistance Junction–to–Air
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁOperating Ambient Temperature
Maximum Junction Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁMaximum Operating Junction Temperature
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁStorage Temperature Range
Pin No.
1
2
3
4
5
7
9
10
11
13
14
All pins
All pins
3–4
5
5
Symbol
Vband
TxEn
VGSM
VDCS
Vstartup
Vbat
V+
V–
Vboost
VZ
CE
GSM/DCS
PA startup
PA startup
PD
PD
RJ–A
TA
Tjmax
Tj
TSTG
Value
MIN
0
0
–5
–5
0
0
0
0
0
–5.4
0
Value
MAX
5.5
5.5
5.5
5.5
5.5
5.5
5.5
5.5
12
5.5
5.5
2
200
1
50
700
500
200
200
–40 to +85
150
125
–60 to +150
Units
V
V
V
V
V
V
V
V
V
V
V
kV
V
mA
mA
mA
mW
mW
°C/W
°C
°C
°C
°C
Note1: The control pins, CE, TxEn and Bands shall never exceed Vcc + 0.3V
Note2: A 100nF decoupling capacitor is recommended between the IC Vcc and ground
Note3: To avoid any damage to the IC, the following sequence must be secured:
CE goes up then Tx goes up ––––> modulation startup
TX goes down then CE goes down ––––> modulation stop
http://onsemi.com
3


3Pages


MC33170 電子部品, 半導体
MC33170
TYPICAL OPERATING CHARACTERISTICS
900
800
700
600 BAND
TxEn
500
400 CE
300
200
100
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 1. TxEn, BAND, CE Logic Level with Temperature
2.502
2.500
ILDOout = 5mA
2.498
2.496
ILDOout = 10mA
2.494
2.492
2.490
2.488
-50
0 50 100
TEMPERATURE (°C)
Figure 2. LDO Voltage Output Variation with
Temperature
150
2.55 140
2.53
2.51
2.49
VLDOout @ Vbat = 3.6V, 25°C
2.47
120 Dropout = 10mA
100
80
Dropout = 5mA
60
40
Dropout = 1mA
20
2.45
0
24
6 8 10 12 14 16
ILDOout (mA)
Figure 3. LDO Output Voltage versus LDO Output
Current @ 25°C
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 4. LDO Dropout versus ILDOout Current @ 25°C
1600
1400
1200
1000
800
600
400
200
0
-40 -20 0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 5. Quiescent Current versus Temperature
3.0
2.0
1.0 Negative Neg-Reg Threshold
0
-1.0
-2.0
-3.0
-4.0
-5.0
-40 -20
Positive Neg-Reg Threshold
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 6. Neg–Reg Thresholds versus Temperature
http://onsemi.com
6

6 Page



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共有リンク

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部品番号部品説明メーカ
MC33170

RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

ON Semiconductor
ON Semiconductor
MC33171

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Motorola Semiconductors
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MC33171

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ON Semiconductor
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MC33171

LOW POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIERS

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