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MC33152のメーカーはMotorola Semiconductorsです、この部品の機能は「HIGH SPEED DUAL MOSFET DRIVERS」です。 |
部品番号 | MC33152 |
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部品説明 | HIGH SPEED DUAL MOSFET DRIVERS | ||
メーカ | Motorola Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとMC33152ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
High Speed Dual
MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital signals to
drive large capacitive loads with high slew rates. These devices feature low
input current making them CMOS/LSTTL logic compatible, input hysteresis
for fast output switching that is independent of input transition time, and two
high current totem pole outputs ideally suited for driving power MOSFETs.
Also included is an undervoltage lockout with hysteresis to prevent system
erratic operation at low supply voltages.
Typical applications include switching power supplies, dc–to–dc
converters, capacitor charge pump voltage doublers/inverters, and motor
controllers.
This device is available in dual–in–line and surface mount packages.
• Two Independent Channels with 1.5 A Totem Pole Outputs
• Output Rise and Fall Times of 15 ns with 1000 pF Load
• CMOS/LSTTL Compatible Inputs with Hysteresis
• Undervoltage Lockout with Hysteresis
• Low Standby Current
• Efficient High Frequency Operation
• Enhanced System Performance with Common Switching Regulator
Control ICs
Order this document by MC34152/D
MC34152
MC33152
HIGH SPEED
DUAL MOSFET DRIVERS
SEMICONDUCTOR
TECHNICAL DATA
P SUFFIX
PLASTIC PACKAGE
CASE 626
8
1
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
Representative Diagram
VCC 6
+
–
5.7V
Logic
Input A 2
Drive Output A
7
100k
PIN CONNECTIONS
N.C. 1
Logic Input A 2
Gnd 3
Logic Input B 4
8 N.C.
7 Drive Output A
6 VCC
5 Drive Output B
(Top View)
Logic
Input B 4
Gnd 3
MOTOROLA ANALOG IC DEVICE DATA
Drive Output B
5
100k
ORDERING INFORMATION
Device
MC34152D
MC34152P
Operating
Temperature Range
TA = 0° to +70°C
Package
SO–8
Plastic DIP
MC33152D
SO–8
TA = – 40° to + 85°C
MC33152P
Plastic DIP
© Motorola, Inc. 1996
Rev 0
1
1 Page MC34152 MC33152
Figure 1. Switching Characteristics Test CIrcuit
12V
4.7 0.1
+
6
Logic Input
+
+–
5.7V
2
Drive Output
7
50 CL
45
Figure 2. Switching Waveform Definitions
Logic Input
tr, tf ≤ 10 ns
5V
0V
Drive Output
90%
10%
tPLH
tPHL
10%
90%
tr tf
3
Figure 3. Logic Input Current versus Input Voltage
2.4
VCC = 12 V
2.0 TA = 25°C
1.6
1.2
0.8
0.4
0
0
2.0 4.0 6.0 8.0 10
Vin, INPUT VOLTAGE (V)
12
Figure 5. Drive Output High to Low Propagation
Delay versus Logic Input Overdrive Voltage
200
VCC = 12 V
CL = 1.0 nF
160 TA = 25°C
Overdrive Voltage is with Respect
to the Logic Input Lower Threshold
120
80
40
Vth(lower)
0
–1.6 –1.2 – 0.8 – 0.4
0
Vin, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)
Figure 4. Logic Input Threshold Voltage
versus Temperature
2.2
VCC = 12 V
2.0
1.8
Upper Threshold
Low State Output
1.6
Lower Threshold
1.4 High State Output
1.2
1.0
– 55 – 25 0 25 50 75 100 125
TA, AMBIENT TEMPERATURE (°C)
Figure 6. Drive Output Low to High Propagation
Delay versus Logic Input Overdrive Voltage
200
Overdrive Voltage is with Respect VCC = 12 V
to the Logic Input Upper Threshold CL = 1.0 nF
160 TA = 25°C
120
80
40
0 Vth(upper)
01 2 34
Vin, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)
MOTOROLA ANALOG IC DEVICE DATA
3
3Pages MC34152 MC33152
the 5.8 V upper threshold. The lower UVLO threshold is 5.3 V,
yielding about 500 mV of hysteresis.
Power Dissipation
Circuit performance and long term reliability are enhanced
with reduced die temperature. Die temperature increase is
directly related to the power that the integrated circuit must
dissipate and the total thermal resistance from the junction to
ambient. The formula for calculating the junction temperature
with the package in free air is:
TJ = TA + PD (RθJA)
where: TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
RθJA = Thermal Resistance Junction to Ambient
completely switch the MOSFET ‘on,’ the gate must be
brought to 10 V with respect to the source. The graph shows
that a gate charge Qg of 110 nC is required when operating
the MOSFET with a drain to source voltage VDS of 400 V.
Figure 17. Gate–to–Source Voltage
versus Gate charge
16
MTM15B50
ID = 15 A
TA = 25°C
12
VDS = 100 V
VDS = 400 V
8.0
8.9 nF
There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:
PD = PQ + PC + PT
where:
PQ = Quiescent Power Dissipation
PC = Capacitive Load Power Dissipation
PT = Transition Power Dissipation
The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 16. The
device’s quiescent power dissipation is:
PQ = VCC (ICCL [1–D] + ICCH [D])
where: ICCL = Supply Current with Low State Drive
Outputs
ICCH = Supply Current with High State Drive
Outputs
D = Output Duty Cycle
The capacitive load power dissipation is directly related to
the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:
PC = VCC (VOH – VOL) CL f
where:
VOH = High State Drive Output Voltage
VOL = Low State Drive Output Voltage
CL = Load Capacitance
f = Frequency
4.0
2.0 nF
∆ Qg
CGS = ∆ VGS
0
0 40 80 120 160
Qg, GATE CHARGE (nC)
The capacitive load power dissipation is directly related to the
required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:
PC(MOSFET) = VCC Qg f
The flat region from 10 nC to 55 nC is caused by the
drain–to–gate Miller capacitance, occurring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
MC34152 is able to quickly deliver the required gate charge
for fast power efficient MOSFET switching. By operating the
MC34152 at a higher VCC, additional charge can be provided
to bring the gate above 10 V. This will reduce the ‘on’
resistance of the MOSFET at the expense of higher driver
dissipation at a given operating frequency.
The transition power dissipation is due to extremely short
simultaneous conduction of internal circuit nodes when the
Drive Outputs change state. The transition power dissipation
per driver is approximately:
PT ≈ VCC (1.08 VCC CL f – 8 x 10–4)
PT must be greater than zero.
When driving a MOSFET, the calculation of capacitive load
power PC is somewhat complicated by the changing gate to
source capacitance CGS as the device switches. To aid in this
calculation, power MOSFET manufacturers provide gate
charge information on their data sheets. Figure 17 shows a
curve of gate voltage versus gate charge for the Motorola
MTM15N50. Note that there are three distinct slopes to the
curve representing different input capacitance values. To
Switching time characterization of the MC34152 is
performed with fixed capacitive loads. Figure 13 shows that
for small capacitance loads, the switching speed is limited by
transistor turn–on/off time and the slew rate of the internal
nodes. For large capacitance loads, the switching speed is
limited by the maximum output current capability of the
integrated circuit.
6 MOTOROLA ANALOG IC DEVICE DATA
6 Page | |||
ページ | 合計 : 10 ページ | ||
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MC33151 | HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |
MC33151 | (MC34151 / MC33151) HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |
MC33151 | (MC34151 / MC33151) High Speed Dual MOSFET Drivers | ON Semiconductor |
MC33152 | HIGH SPEED DUAL MOSFET DRIVERS | Motorola Semiconductors |