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STP12NB30 の電気的特性と機能

STP12NB30のメーカーはST Microelectronicsです、この部品の機能は「N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP12NB30
部品説明 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
メーカ ST Microelectronics
ロゴ ST Microelectronics ロゴ 




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STP12NB30 Datasheet, STP12NB30 PDF,ピン配置, 機能
STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STP3NB60
300 V
STP12NB30FP 300 V
< 0.40
< 0.40
12A
6.5 A
s TYPICAL RDS(on) = 0.34
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
PRELIMINARY DATA
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY(UPS)
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM ( )
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
January 1998
Value
ST P12NB30 ST P12NB30FP
300
300
± 30
12 6.5
7.5 4
48 48
125 35
1 0.28
5.5 5.5
2000
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
V
oC
oC
1/6

1 Page





STP12NB30 pdf, ピン配列
STP12NB30/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
P a ra m et er
Turn-on Time
Rise Time
Test Conditions
VDD = 150 V ID = 6 A
RG = 4.7
VGS = 10 V
Qg Total Gate Charge
VDD =240 V ID =12A VGS = 10 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 240 V ID =12 A
RG = 4.7 VGS = 10 V
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 12 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
ISD = 12 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
20
10
Max.
28
14
Unit
ns
ns
29 40 nC
11 nC
12 nC
Min.
Typ .
10
10
20
Max.
14
14
28
Unit
ns
ns
ns
Min.
Typ .
Max.
12
48
Unit
A
A
1.5
250
V
ns
2 µC
16 A
3/6


3Pages


STP12NB30 電子部品, 半導体
STP12NB30/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. ..
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共有リンク

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部品番号部品説明メーカ
STP12NB30

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

ST Microelectronics
ST Microelectronics


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