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PDF STP12PF06 Data sheet ( Hoja de datos )
| Número de pieza | STP12PF06 | |
| Descripción | P - CHANNEL 60V - 0.18 ohm - 12A TO-220 STripFET POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
STP12PF06
STF12PF06
60 V
60 V
< 0.20 Ω
< 0.20 Ω
■ TYPICAL RDS(on) = 0.18 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
CHARACTERIZATION
ID
12 A
12 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
PART NUMBER
STP12PF06
STF12PF06
MARKING
P12PF06
F12PF06
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
March 2005
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
STP20PF06
12
8.4
48
60
0.4
Value
60
60
± 20
6
200
STF20PF06
8
5.6
32
225
0.17
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 12A, VDD= 25V
Rev. 2.0
1/10
1 page  
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STP12PF06 STF12PF06
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 13: Normalized Gate Threshold Voltage vs
Temperature
Figure 14: Normalized on Resistance vs Temperature
Figure 15: Source-drain Diode Forward
Characteristics
Figure 16: Normalized Breakdown Voltage
Temperature
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STP12PF06.PDF ] | |
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