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Número de pieza | SPD26N06S2L-35 | |
Descripción | OptiMOS Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPD26N06S2L-35 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
SPD26N06S2L-35
Product Summary
VDS 55 V
RDS(on)
35 mΩ
ID 30 A
P- TO252 -3-11
Type
Package
Ordering Code Marking
SPD26N06S2L-35 P- TO252 -3-11 Q67060-S7426 2N06L35
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=26A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax1)
Reverse diode dv/dt
IS=26A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
30
22
120
80
5
6
±20
68
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-05-09
1 page SPD26N06S2L-35
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPD26N06S2L-35
75 Ptot = 68W
A
i
60
55
50
45
40
35
30
VGS [V]
a 2.8
b 3.0
c 3.2
d 3.4
e 3.6
f 3.8
g 4.0
h h 4.5
i 10.0
25 g
20 f
15 e
10 d
5c
b
0a
0 0.5 1 1.5 2 2.5 3 3.5 4 V
5
VDS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPD26N06S2L-35
120
mΩ
def g
100
h
90
80
70
60
50
40
30 i
20
VGS [V] =
10 d e f
3.4 3.6 3.8
ghi
4.0 4.5 10.0
0
0 4 8 12 16 20 24 28 32 36 A 42
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
55
A
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 V 5.5
VGS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
28
S
24
22
20
18
16
14
12
10
8
6
4
2
0
0 4 8 12 16 A 24
ID
Page 5
2003-05-09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SPD26N06S2L-35.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPD26N06S2L-35 | OptiMOS Power-Transistor | Infineon Technologies |
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