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PDF SPD18P06P Data sheet ( Hoja de datos )
| Número de pieza | SPD18P06P | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Preliminary data
SPD18P06P
SPU18P06P
SIPMOS® Power-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· dv/dt rated
· 175°C operating temperature
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
VDS
RDS(on)
ID
-60
0.13
-18.6
V
W
A
Type
SPD18P06P
SPU18P06P
Package
P-TO252
P-TO251
Ordering Code
Q67040-S4189
Q67040-S4192
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
ID puls
Avalanche energy, single pulse
ID = -18.6 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = -18.6 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Pin 1 PIN 2/4 PIN 3
GDS
Value
-18.6
-13.2
-74.4
150
8
6
Unit
A
mJ
kV/µs
±20
80
-55...+175
55/175/56
V
W
°C
Page 1
1999-11-22
1 page  
Preliminary data
SPD18P06P
SPU18P06P
Power dissipation
Ptot = f (TC)
SPD18P06P
90
W
Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPD18P06P
-20
A
70 -16
-14
60
-12
50
-10
40
-8
30
-6
20 -4
10 -2
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 2 SPD18P06P
tp = 29.0µs
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPD18P06P
K/W
A
-10 1
-10
0
-10
-1
-10 0
100 µs
10 0
10 -1
-10 1
1 ms
10 ms
DC
V -10 2
VDS
Page 5
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
1999-11-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SPD18P06P.PDF ] | |
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