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PDF SPD14N05 Data sheet ( Hoja de datos )
| Número de pieza | SPD14N05 | |
| Descripción | SIPMOS Power Transistor | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPD14N05 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
SPD14N05
SPU14N05
Pin 1
G
Pin 2
D
Pin 3
S
Type
SPD14N05
SPU14N05
VDS
55 V
55 V
ID
13.5 A
13.5 A
RDS(on)
0.1 Ω
0.1 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 13.5 A, VDD = 25 V, RGS = 25 Ω
L = 571 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 13.5 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Package
P-TO252
P-TO251
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Ordering Code
Q67040 - S4123 - A2
Q67040 - S4115 - A2
Values
13.5
9.6
54
52
13.5
3.5
6
± 20
35
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998
1 page  
SPD14N05
SPU14N05
Power dissipation
Ptot = ƒ(TC)
36
W
P
tot
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 °C 180
TC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
14
A
12
I
D
11
10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
tp = 3.3µs
A
I
D
10 µs
10 1
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
100 µs
10 -1
D = 0.50
10 0
1 ms
0.20
0.10
10 ms
DC
10 -2
0.05
0.02
single pulse
0.01
10 -1
10 0
10 1
Semiconductor Group
V 10 2
VDS
5
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
29/Jan/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPD14N05.PDF ] | |
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