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PDF SPD08N10 Data sheet ( Hoja de datos )
| Número de pieza | SPD08N10 | |
| Descripción | SIPMOS Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Preliminary Data
SIPMOS® Power Transistor
Features
• N channel
• Enhancement mode
• Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
• dv/dt rated
SPD 08N10
VDS 100 V
RDS(on) 0.3 Ω
ID 8.4 A
Type
SPD08N10
SPU08N10
Package
P-TO252
P-TO251
Ordering Code Packaging
Q67040-S4126-A2 Tape and Reel
Q67040-S4118-A2 Tube
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
TC = 25 ˚C
Avalanche energy, single pulse
ID = 8.4 A, VDD = 25 V, RGS = 25 Ω
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 8.4 A, VDS = 80 V, di/dt = 200 A/µs
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
8.4
5.4
33.6
30
4
6
±20
40
-55... +175
55/150/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
05.99
1 page  
SPD 08N10
Power Dissipation
Ptot = f (TC)
SPD08N10
45
W
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 ˚C 160
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 ˚C
10 2 SPD08N10
A tp = 15.0µs
10 1
100 µs
1 ms
10 0
10 ms
DC
Drain current
ID = f (TC)
parameter: VGS ≥ 10 V
SPD08N10
10
A
8
7
6
5
4
3
2
1
0
0
20 40 60 80 100 120 ˚C 160
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPD08N10
K/W
10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-1
10
0
10 1
Data Sheet
10 2 V 10 3
VDS
5
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
05.99
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPD08N10.PDF ] | |
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