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Número de pieza | SPB17N80C3 | |
Descripción | Cool MOS Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPB17N80C3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! CoolMOS® Power Transistor
Features
• new revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPB17N80C3
800 V
0.29 Ω
91 nC
PG-TO263
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application (i.e. active clamp forward)
Type
SPB17N80C3
Package
PG-TO263
Marking
17N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3.4 A, V DD=50 V
I D=17 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Rev. 2.5
page 1
Value
17
11
51
670
0.5
17
50
±20
±30
227
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2011-09-27
1 page 5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
35
30
25
20
5.5 V
15
5V
10
4.5 V
5
SPB17N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
1.4
20 V
1.3
10 V
6 V 1.2
1.1 10 V
1
0.9
0.8 5.5 V
4 V 4.5 V 5 V
0.7
6V
6.5 V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=11 A; V GS=10 V
20
0.8
0.6
0.6
25 0 10 20 30
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
60
50
40
40 50
25 °C
0.4
98 %
typ
0.2
30
20
10
150 °C
0
-60 -20 20
60 100 140 180
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.5
page 5
2011-09-27
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SPB17N80C3.PDF ] |
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SPB17N80C3 | Cool MOS Power Transistor | Infineon Technologies |
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