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Datasheet SP8611BDG Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SP8611BDG | asynchronous ECL divide Obsolescence Notice
This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit
http://products.zarlink.com/obsolete_products/
THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND | Zarlink Semiconductor | data |
SP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SP80001 | 800MHz Low-loss SAW Filter 53MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute
800MHz Low-loss SAW Filter 53MHz Bandwidth
Part Number: SP80001
www.sipatsaw.com
SIPAT Co., Ltd.
Specifications
Parameter Center Frequency
Insertion Loss 1 dB Bandwidth 3 dB Bandwidth 35 dB Bandwidth Pass SIPAT filter | | |
2 | SP8005 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8005
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.5 @ VGS=4.5V 3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V 4.3 @ VGS=3.1V 5.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). SamHop Microelectronics transistor | | |
3 | SP8006 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8006
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
4.5 @ VGS=4.5V 4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V 5.5 @ VGS=3.1V 6.0 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON SamHop Microelectronics transistor | | |
4 | SP8007 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8007
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
3.8 @ VGS=4.5V 3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V 5.1 @ VGS=3.1V 5.9 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). SamHop Microelectronics transistor | | |
5 | SP8008 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8008
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Typ
3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mo SamHop Microelectronics transistor | | |
6 | SP8009 | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009
Ver 1.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
24A
R DS(ON) (m Ω) Typ
6.0 @ VGS=10V 7.2 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P SamHop Microelectronics transistor | | |
7 | SP8009E | N-Channel Enhancement Mode Field Effect Transistor Green Product
SP8009E
Ver 1.5
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.0 @ VGS=10V 6.5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. E SamHop Microelectronics transistor | |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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