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LM3146N の電気的特性と機能

LM3146NのメーカーはNational Semiconductorです、この部品の機能は「LM3146 High Voltage Transistor Array」です。


製品の詳細 ( Datasheet PDF )

部品番号 LM3146N
部品説明 LM3146 High Voltage Transistor Array
メーカ National Semiconductor
ロゴ National Semiconductor ロゴ 




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LM3146N Datasheet, LM3146N PDF,ピン配置, 機能
February 1995
LM3146 High Voltage Transistor Array
General Description
The LM3146 consists of five high voltage general purpose
silicon NPN transistors on a common monolithic substrate
Two of the transistors are internally connected to form a
differentially-connected pair The transistors are well suited
to a wide variety of applications in low power system in the
dc through VHF range They may be used as discrete tran-
sistors in conventional circuits however in addition they
provide the very significant inherent integrated circuit ad-
vantages of close electrical and thermal matching The
LM3146 is supplied in a 14-lead molded dual-in-line pack-
age for applications requiring only a limited temperature
range
Features
Y High voltage matched pairs of transistors VBE matched
g5 mV input offset current 2 mA max at IC e 1 mA
Y Five general purpose monolithic transistors
Y Operation from dc to 120 MHz
Y Wide operating current range
Y Low noise figure
3 2 dB typ at 1 kHz
Applications
Y General use in all types of signal processing systems
operating anywhere in the frequency range from dc to
VHF
Y Custom designed differential amplifiers
Y Temperature compensated amplifiers
Connection Diagram
Dual-In-Line and Small Outline Packages
Top View
Order Number LM3146M or LM3146N
See NS Package Number M14A or N14A
TL H 7959 – 1
C1995 National Semiconductor Corporation TL H 7959
RRD-B30M115 Printed in U S A

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LM3146N pdf, ピン配列
AC Electrical Characteristics
Symbol
Parameter
Conditions
Limits
Units
Min Typ Max
NF Low Frequency Noise Figure
f e 1 kHz VCE e 5V
IC e 100 mA RS e 1 kX
fT Gain Bandwidth Product
VCE e 5V IC e 3 mA
CEB Emitter to Base Capacitance
VEB e 5V IE e 0
CCB Collector to Base Capacitance
VCB e 5V IC e 0
CCI Collector to Substrate Capacitance VCI e 5V IC e 0
Low Frequency Small Signal Equivalent Circuit Characteristics
3 25
300 500
0 70
0 37
22
dB
MHz
pF
pF
pF
hfe Forward Current Transfer Ratio
hie Short Circuit Input Impedance
hoe Open Circuit Output Impedance
hre Open Circuit Reverse Voltage
Transfer Ratio
Admittance Characteristics
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V IC e 1 mA
f e 1 kHz VCE e 3V
IC e 1 mA
100
35
15 6
1 8 x 10b4
kX
mmho
Yfe Forward Transfer Admittance
f e 1 MHz VCE e 3V IC e 1 mA
31 b j 1 5
mmho
Yie Input Admittance
f e 1 MHz VCE e 3V IC e 1 mA
0 3 a j 0 04
mmho
Yoe Output Admittance
f e 1 MHz VCE e 3V IC e 1 mA
0 001 a j 0 03
mmho
Yre Reverse Transfer Admittance
f e 1 MHz VCE e 3V IC e 1 mA
(Note 3)
mmho
Note 1 The collector of each transistor is isolated from the substrate by an integral diode The substrate must be connected to a voltage which is more negative
than any collector voltage in order to maintain isolation between transistors and provide normal transistor action To avoid undesired coupling between transistors
the substrate terminal should be maintained at either dc or signal (ac) ground A suitable bypass capacitor can be used to establish a signal ground
Note 2 If the transistors are forced into zener breakdown (V(BR)EBO) degradation of forward transfer current ratio (hFE) can occur
Note 3 See curve
3


3Pages


LM3146N 電子部品, 半導体
Physical Dimensions inches (millimeters)
SO Package (M)
Order Number LM3146M
NS Package Number M14A
Molded Dual-In-Line Package (N)
Order Number LM3146N
NS Package Number N14A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION As used herein
1 Life support devices or systems are devices or
systems which (a) are intended for surgical implant
into the body or (b) support or sustain life and whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury
to the user
2 A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system or to affect its safety or
effectiveness
National Semiconductor
Corporation
1111 West Bardin Road
Arlington TX 76017
Tel 1(800) 272-9959
Fax 1(800) 737-7018
National Semiconductor
Europe
Fax (a49) 0-180-530 85 86
Email cnjwge tevm2 nsc com
Deutsch Tel (a49) 0-180-530 85 85
English Tel (a49) 0-180-532 78 32
Fran ais Tel (a49) 0-180-532 93 58
Italiano Tel (a49) 0-180-534 16 80
National Semiconductor
Hong Kong Ltd
13th Floor Straight Block
Ocean Centre 5 Canton Rd
Tsimshatsui Kowloon
Hong Kong
Tel (852) 2737-1600
Fax (852) 2736-9960
National Semiconductor
Japan Ltd
Tel 81-043-299-2309
Fax 81-043-299-2408
National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications

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共有リンク

Link :


部品番号部品説明メーカ
LM3146

LM3146 High Voltage Transistor Array

National Semiconductor
National Semiconductor
LM3146M

LM3146 High Voltage Transistor Array

National Semiconductor
National Semiconductor
LM3146N

LM3146 High Voltage Transistor Array

National Semiconductor
National Semiconductor


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