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Datasheet 28C256 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 28C256 | 256K 32K x 8 Paged CMOS E2PROM AT28C256
Features
• • • • • • • • • • •
Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Page Write Operation Lo |  ATMEL Corporation | cmos |
| 2 | 28C256 | 5 Volt / Byte Alterable E2PROM X28C256 256K
X28C256
5 Volt, Byte Alterable E2PROM
32K x 8 Bit
FEATURES
DESCRIPTION
The X28C256 is an 32K x 8 E2PROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories the X28C256 is a 5V only device. The X28C |  Xicor | data |
| 3 | 28C256 | 32K-Bit Parallel E2PROM CAT28C256
32K-Bit Parallel E2PROM FEATURES
s Fast Read Access Times: 120/150ns s Low Power CMOS Dissipation: s Hardware and Software Write Protection s Automatic Page Write Operation:
–Active: 25 mA Max. –Standby: 150 µA Max.
s Simple Write Operation:
–1 to 64 Bytes in 5ms –Page Load Time |  Catalyst | data |
| 4 | 28C256T | 256K EEPROM (32K x 8-Bit) EEPROM 28C256T
256K EEPROM (32K x 8-Bit) EEPROM
VCC GND DATA INPUTS/OUTPUTS I/O0 - I/O7
OE WE CE OE, CE, and WE LOGIC
DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX
ADDRESS INPUTS
Y DECODER
X DECODER IDENTIFICATION
Logic Diagram
Memory
FEATURES:
• RAD-PAK® radiation-har |  Maxwell Technologies | data |
28C Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 28C010T | 1 Megabit (128K x 8-Bit) EEPROM 28C010T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 Y Decoder Address Buffer and Latch A7 A16 Data Latch Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
A6
X Decoder
Memory Array
Memory
Logic Diagram
FEATUR Maxwell Technologies data | | |
| 2 | 28C011T | 1 Megabit (128K x 8-Bit) EEPROM 1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
28C011T
A7 A16
X Decoder
Memory Array
Data Latch
Memory
Logic Diagram
FEATURES:
• 128k x 8-bi  ETC data | | |
| 3 | 28C011T | 1 Megabit (128K x 8-Bit) EEPROM 28C011T
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
28C011T
Y Decoder Address Buffer and Latch
Y Gating
A6
A7 A16
X Decoder
Memory Array
Data Latch
Memory
Logic Di Maxwell Technologies data | | |
| 4 | 28C04A | 4K (512 x 8) CMOS EEPROM 28C04A
4K (512 x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/Write Cycles - Automatic Write Operati  Microchip Technology cmos | | |
| 5 | 28C16 | 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION M28C16
16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION
NOT FOR NEW DESIGN
FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION: – Data Polli  STMicroelectronics data | | |
| 6 | 28C16A | 16K (2K x 8) CMOS EEPROM 28C16A
16K (2K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Microchip Technology cmos | | |
| 7 | 28C16B | M28C16B
M28C16B M28C17B
16 Kbit (2K x 8) Parallel EEPROM With Software Data Protection
PRELIMINARY DATA
s s
Fast Access Time: 90 ns at VCC=5V Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W
s s
Low Power Consumption Fast BYTE and PAGE WRITE (up STMicroelectronics data | | |
| 8 | 28C17A | 16K (2K x 8) CMOS EEPROM 28C17A
16K (2K x 8) CMOS EEPROM
FEATURES
• Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 µA Standby • Fast Byte Write Time—200 µs or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles • Automatic Write Microchip Technology cmos | | |
| 9 | 28C256 | 256K 32K x 8 Paged CMOS E2PROM AT28C256
Features
• • • • • • • • • • •
Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum 1 to 64-Byte Page Write Operation Lo ATMEL Corporation cmos | |
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