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PDF SFH6316T Data sheet ( Hoja de datos )
| Número de pieza | SFH6316T | |
| Descripción | HIGH SPEED OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Voltage, 2500 VRMS
• Very High Common Mode Transient Immunity:
15000 V/µs at VCM=1500 V Guaranteed (SFH6343T)
• High Speed: 1 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0°C to 70°C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315T—HCPL0500
SFH6316T—HCPL0501
SFH6343T—HCPL0453
• Available in Tape and Reel (suffix T)
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315T/16T/43T, high speed optocouplers, each
consists of a GaAlAs infrared emitting diode, optically
coupled with an integrated photodetector and a high
speed transistor. The photodetector is junction isolated
from the transistor to reduce miller capacitance effects.
The open collector output function allows circuit design-
ers to adjust the load conditions when interfacing with
different logic systems such as TTL, CMOS, etc.
Because the SFH6343T has a Faraday shield on the
detector chip, it can also reject and minimize high input
to output common mode transient voltages. There is no
base connection, further reducing the potential electrical
noise entering the package.
The SFH6315T/16T/43T are packaged in industry stan-
dard SOIC-8 packages and are suitable for surface
mounting.
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage........................................................... 3 V
DC Forward Current................................................25 mA
Surge Forward Current ................................................1 A
tp≤1 µs, 300 pulses/sec.
Total Power Dissipation (TA≤70°C) ........................ 45 mW
SFH6315T
SFH6316T
SFH6343T
HIGH SPEED OPTOCOUPLER
Package Dimensions in Inches (mm)
.120±.002
(3.05±.05)
.240
(6.10)
Pin 1
.192±.005
(4.88±.13)
SSFFHH6633115T5/66T
NC 1
8 VCC
A 2 7 Base VB
K3 6C
NC 4
5E
CL(.135.941±±.0.0052)
SFHH66334433T
NC 1
8 VCC
A 2 7 NC
.016
(.41)
K3 6C
NC 4
5E
.015±.002
(.38±.05)
7°
40° .058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
.050 (1.27) typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
5° max.
R.010
(.25) max.
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ± .005 (unless otherwise noted)
Absolute Maximum Ratings (continued)
Detector (Si Photodiode + Transistor)
Supply Voltage ............................................................–0.5 to 30 V
Output Voltage ..........................................................–0.5 to ≥20 V
Output Current ...................................................................... 8 mA
Total Power Dissipation (TA≤70°C)................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector ............................. 2500 VACRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE0110) .................................................2
Creepage ............................................................................≥4 mm
Clearance............................................................................≥4 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL (Note 2) .............................≥1012 Ω
VIO=500 V, TA=100°C, RISOL(Note 2)............................≥1011 Ω
Storage Temperature Range.............................. –55°C to +150°C
Ambient Temperature Range............................. –55°C to +100°C
Junction Temperature ..........................................................100°C
Soldering Temperature (t=10 sec. max.) .............................260°C
Dip soldering: distance to seating plane ≥1.5 mm
Specifications subject to change.
Semiconductor Group
4–44
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