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PDF SFH415 Data sheet ( Hoja de datos )
| Número de pieza | SFH415 | |
| Descripción | GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH415 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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GaAs-IR-Lumineszenzdioden
GaAs Infrared Emitters
SFH 415
SFH 416
Cathode
29
27
1.8
1.2
9.0
8.2
7.8
7.5
5.9
5.5
Area not flat
Chip position
Approx. weight 0.2 g
Area not flat
0.6
6.9
6.1
0.4 5.7
5.5
4.8
4.2
0.6
0.4
GEO06645
5.9
5.5
1.8
1.2
29.5
27.5
Cathode (Diode)
Collector (Transistor)
Approx. weight 0.4 g
4.0
3.4
Chip position
0.6
0.4
GEX06630
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q GaAs-IR-Lumineszenzdioden, hergestellt
im Schmelzepitaxieverfahren
q Gute Linearität (Ie = f [IF]) bei hohen Strömen
q Sehr hoher Wirkungsgrad
q Hohe Zuverlässigkeit
q Hohe Impulsbelastbarkeit
q SFH 415: Gehäusegleich mit SFH 300,
SFH 203
Anwendungen
q IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
q Gerätefernsteuerungen
Features
q GaAs infrared emitting diodes, fabricated in
a liquid phase epitaxy process
q Good linearity (Ie = f [IF]) at high currents
q High efficiency
q High reliability
q High pulse handling capability
q SFH 415: Same package as SFH 300,
SFH 203
Applications
q IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
q Remote control of various equipment
Semiconductor Group
1
1997-11-01
1 page  
SFH 415
SFH 416
Relative spectral emission
Irel = f (λ)
100
%
Ι rel
80
OHRD1938
60
40
20
Radiant intensity
Ie
Ie 100 mA
=
f
(IF)
Single pulse, tp = 20 µs
10 2
A
Ιe
Ι e 100 mA
OHR01551
10 1
10 0
10 -1
Max. permissible forward current
IF = f (TA)
120
Ι F mA
100
OHR00883
80
RthjA = 450 K/W
60
40
20
0
880 920 960 1000 nm 1060
λ
Forward current
IF = f (VF), single pulse, tp = 20 µs
10 1 OHR01554
A
ΙF
10 0
10 -1
10 -2
10 -3 10 -2 10 -1 10 0 A 10 1
ΙF
0
0 20 40 60 80 100 ˚C 120
TA
Radiation characteristics SFH 415 Irel = f (ϕ)
40
30
20 10
0
ϕ
1.0
50
0.8
60
0.6
OHR01552
70 0.4
10 -2
10 -3
1 2 3 4V5
VF
80
90
100
1.0 0.8 0.6
0.4
Radiation characteristics SFH 416 Irel = f (ϕ)
40˚ 30˚ 20˚ 10˚ 0˚
ϕ 1.0
50˚
0.8
60˚ 0.6
OHR01553
70˚ 0.4
80˚ 0.2
0
90˚
100˚
1.0 0.8 0.6
0.4
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
0.2
0 20 40 60 80 100 120
Permissible pulse handling capability
IF = f (τ), TC = 25 °C,
duty cycle D = parameter
10 4 OHR00860
Ι F mA
5
D
=
tp
T
D = 0.005
tp
T
ΙF
0.01
0.02
10 3 0.1
0.05
0.2
5
0.5
10 2 DC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
tp
Semiconductor Group
5
1997-11-01
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH415.PDF ] | |
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