|
|
PDF SFH3400 Data sheet ( Hoja de datos )
| Número de pieza | SFH3400 | |
| Descripción | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SFH3400 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 3400
Chip position
4.8
4.4
Active area
0.55 0.7
0.3
not
connected
2.7
Collector 2.5 Emitter
GEO06953
Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 460 nm bis 1080 nm
q Hohe Linearität
q SMT-Bauform ohne Basisanschluß,
geeignet für Vapor Phase-Löten und
IR-Reflow-Löten (JEDEC level 4)
q Nur gegurtet lieferbar
Anwendungen
q Umgebungslicht-Detektor
q Lichtschranken für Gleich- und Wechsel-
lichtbetrieb
q Industrieelektronik
q „Messen/Steuern/Regeln“
Features
q Especially suitable for applications from
460 nm to 1080 nm
q High linearity
q SMT package without base connection,
suitable for vapor phase and IR reflow
soldering (JEDEC level 4)
q Available only on tape and reel
Applications
q Ambient light detector
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Semiconductor Group
1
1998-04-27
1 page  
SFH 3400
TA = 25 oC, λ = 950 nm
Rel.spectral sensitivity Srel = f (λ)
100 OHF02332
S rel %
80
70
60
50
40
30
20
10
0400 500 600 700 800 900 nm 1100
λ
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
Ι PCE 1.6
Ι PCE25
1.4
OHF01524
1.2
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 C 100
TA
Photocurrent IPCE = f (VCE)
3.0 OHF00327
mA
Ι pce
2.5
1.0 mW/cm 2
2.0
1.5
0.5 mW/cm 2
1.0
0.25 mW/cm 2
0.5
0.1 mW/cm 2
0
0 10 20 30 40 50 60 V 70
Vce
Photocurrent IPCE = f (Ee), VCE = 5 V
10 1
mA
Ι pce
10 0
10 -1
OHF00326
1
2
3
10 -2
10 -3
10 -4
10 -3 10 -2 mW/cm 2 10 0
Ee
Dark current
ICEO = f (TA), VCE = 10 V, E = 0
10 2
nA
Ι CEO
OHF02342
10 1
10 0
10 -1
10 -2
0
20 40 60 80 ˚C 100
TA
Dark current ICEO = f (VCE), E = 0
10 2
nA
Ι CEO
OHF02341
10 1
10 0
10 -1
10 -2
0
10 20 30 40 50 V 70
V CE
Collector-emitter capacitance
CCE = f (VCE), f = 1 MHz
50 OHF02344
C CE pF
40
30
20
10
0
10 -2 10 -1 10 0 10 1 V 10 2
VCE
Total power dissipation
Ptot = f (TA)
140
Ptot mW
120
OHF00309
100
80
60
40
20
0 0 20 40 60 80 C 100
TA
Semiconductor Group
5
1998-04-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH3400.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SFH3400 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
| SFH3400-2 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
| SFH3400-3 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
| SFH3401 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |