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PDF SFH314 Data sheet ( Hoja de datos )
| Número de pieza | SFH314 | |
| Descripción | .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH314 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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.Neu: NPN-Silizium-Fototransistor
New: Silicon NPN Phototransistor
SFH 314
SFH 314 FA
SFH 314
SFH 314 FA
Area not flat
0.6
6.9
6.1
0.4 5.7
5.5
1.8
1.2
29.5
27.5
Cathode (Diode)
Collector (Transistor)
Approx. weight 0.4 g
4.0
3.4
Chip position
5.9
5.5
0.6
0.4
GEX06630
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 460 nm bis 1080 nm (SFH 314)
und bei 880 nm (SFH 314 FA)
q Hohe Linearität
q 5 mm-Plastikbauform
Anwendungen
q Computer-Blitzlichtgeräte
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Features
q Especially suitable for applications from
460 nm to 1080 nm (SFH 314) and of
880 nm (SFH 314 FA)
q High linearity
q 5 mm plastic package
Applications
q Computer-controlled flashes
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Semiconductor Group
1
1997-11-27
1 page  
SFH 314
SFH 314 FA
TA = 25 °C, λ = 950 nm
Rel. spectral sensitivity SFH 314 Srel = f (λ) Rel. spectr.sensitivity SFH 314 FA,Srel = f(λ) Dark current ICEO = f (VCE), E = 0
100
S rel %
OHF02332
100
Srel %
OHF02331
10 2
nA
Ι CEO
OHF02341
80 80
10 1
70 70
60 60
50 50 10 0
40 40
30 30
10 -1
20 20
10
0
400 500 600 700 800 900 nm 1100
λ
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 oC
Ι PCE 1.6
Ι PCE25
1.4
OHF01524
1.2
10
0
400 500 600 700 800 900 nm 1100
λ
Photocurrent
IPCE = f (Ee), VCE = 5 V
10 1
mA
Ι PCE
OHF02339
10 0
10 -2
0
10 20 30 40 50 V 70
V CE
Collector-emitter capacitance
CCE = f (VCE), f = 1 MHz
50
OHF02344
C CE pF
40
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 C 100
TA
Photocurrent
IPCE = f (VCE), Ee = parameter
10 1
mA
Ι PCE
1
mW
cm 2
OHF02338
0.5
mW
cm 2
0.25
mW
cm 2
10 0
0.1
mW
cm 2
10 -1
10 -2
10 -3
10 -3
10 -2
mW/cm2 10 0
Ee
Total power dissipation
Ptot = f (TA)
250
Ptot mW
OHF02340
200
150
100
30
20
10
0
10 -2 10 -1 10 0
10 1 V 10 2
VCE
Dark current
ICEO = f (TA), VCE = 10 V, E = 0
10 2
nA
Ι CEO
OHF02342
10 1
10 0
10 -1
50
10 -1
0 10 20 30 40 50 V 70
VCE
0 0 20 40 60 80 ˚C 100
TA
10 -2
0
20 40 60 80 ˚C 100
TA
Semiconductor Group
5
1997-11-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH314.PDF ] | |
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