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PDF SFH313 Data sheet ( Hoja de datos )
| Número de pieza | SFH313 | |
| Descripción | .Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SFH313 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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.Neu: NPN-Silizium-Fototransistor
New: Silicon NPN Phototransistor
SFH 313
SFH 313 FA
SFH 313
SFH 313 FA
Area not flat
0.6
9.0
8.2
0.4 7.8
7.5
1.8
1.2
29
27
Cathode (Diode)
Collector (Transistor)
Approx. weight 0.5 g
5.7
5.1
Chip position
5.9
5.5
0.6
0.4
GEX06260
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q Speziell geeignet für Anwendungen im
Bereich von 460 nm bis 1080 nm (SFH 313)
und bei 880 nm (SFH 313 FA)
q Hohe Linearität
q 5 mm-Plastikbauform
Anwendungen
q Computer-Blitzlichtgeräte
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Features
q Especially suitable for applications from
460 nm to 1080 nm (SFH 313) and of
880 nm (SFH 313 FA)
q High linearity
q 5 mm plastic package
Applications
q Computer-controlled flashes
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Semiconductor Group
1
1997-11-27
1 page  
SFH 313
SFH 313 FA
TA = 25 °C, λ = 950 nm
Rel.spectral sensitivity SFH 313, Srel = f (λ)
100 OHF02332
S rel %
Rel.spectr.sensitivity SFH 313FA, Srel= f(λ) Dark current, ICEO = f (VCE), E = 0
100
Srel %
OHF02331
10 2
nA
Ι CEO
OHF02341
80 80
70 70
10 1
60 60
50 50
10 0
40 40
30 30
10 -1
20 20
10
0400 500 600 700 800 900 nm 1100
λ
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25oC
Ι PCE 1.6
Ι PCE25
1.4
OHF01524
1.2
10
0
400 500 600 700 800 900 nm 1100
λ
Photocurrent
IPCE = f (Ee), VCE = 5 V
10 2
mA
Ι PCE
OHF02337
10 1
10 -2
0 10 20 30 40 50 V 70
V CE
Collector-emitter capacitance
CCE = f (VCE), f = 1 MHz
50 OHF02344
C CE pF
40
1.0
0.8
0.6
0.4
0.2
0
-25 0 25 50
Photocurrent IPCE= f (VCE)
E = parameter
75 C 100
TA
10 2
mA
Ι PCE
OHF02336
1
mW
cm 2
0.5
mW
cm 2
10 1
0.25
mW
cm 2
0.1
mW
cm 2
10 0
10 -1
10 -2
10 -3
10 -2
mW/cm2 10 0
Ee
Dark current
ICEO = f (TA), VCE = 10 V, E = 0
10 2
nA
Ι CEO
OHF02342
10 1
10 0
10 -1
30
20
10
0
10 -2 10 -1 10 0
Total power dissipation
Ptot = f (TA)
250
Ptot mW
10 1 V 10 2
VCE
OHF02340
200
150
100
50
10 0
0 10 20 30 40 50 V 70
VCE
10 -2
0
20 40 60 80 ˚C 100
TA
0 0 20 40 60 80 ˚C 100
TA
Semiconductor Group
5
1997-11-27
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SFH313.PDF ] | |
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