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Número de pieza | NDB7052L | |
Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
Fabricantes | Fairchild | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NDB7052L (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! May 1997
NDP7052L / NDB7052L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
75 A, 50 V. RDS(ON) = 0.010 Ω @ VGS= 5 V
RDS(ON) = 0.0075 Ω @ VGS= 10 V.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
TC = 25°C unless otherwise noted
NDP7052L
VDSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
ID Drain Current - Continuous
- Pulsed
PD Maximum Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
50
50
±16
±25
75
225
150
1
-65 to 175
NDB7052L
1
62.5
Units
V
V
V
A
W
W/°C
°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
NDP7052L Rev.B1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet NDB7052L.PDF ] |
Número de pieza | Descripción | Fabricantes |
NDB7052 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild |
NDB7052L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild |
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