|
|
MMSF4P01HDのメーカーはMotorola Semiconductorsです、この部品の機能は「SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS」です。 |
部品番号 | MMSF4P01HD |
| |
部品説明 | SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS | ||
メーカ | Motorola Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとMMSF4P01HDダウンロード(pdfファイル)リンクがあります。 Total 10 pages
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF4P01HD/D
™Designer's Data Sheet
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
G
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Mounting Information for SO–8 Package Provided
MMSF4P01HD
Motorola Preferred Device
SINGLE TMOS POWER FET
4.0 AMPERES
12 VOLTS
RDS(on) = 0.08 OHM
™
D
S
CASE 751–05, Style 13
SO–8
N–C
Source
Source
Gate
18
27
36
45
Drain
Drain
Drain
Drain
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (2)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
S4P01
Top View
Symbol
Value
VDSS
12
VDGR
12
VGS
± 8.0
ID 5.1
ID 3.3
IDM 26
PD 2.5
– 55 to 150
RθJA
TL
50
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
°C/W
°C
(1) Negative sign for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF4P01HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
©MMoottoororolal,aInTc.M19O9S6 Power MOSFET Transistor Device Data
1
1 Page 8
VGS = 8 V
4.5 V
3.1 V
6
2.7 V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5 V
2.3 V
TJ = 25°C
2.1 V
8
VDS ≥ 10 V
6
MMSF4P01HD
4
1.9 V
2
1.7 V
1.5 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
4
TJ = 100°C
25°C
2
– 55°C
0
1 1.2 1.4 1.6 1.8 2 2.2 2.4
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
TJ = 25°C
ID = 2 A
0.12
0.08
0.1
TJ = 25°C
0.09
0.08
VGS = 2.7 V
0.04 0.07 4.5 V
0
0 24 6
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
2
VGS = 4.5 V
1.5 ID = 4 A
8
0.06
0
246
ID, DRAIN CURRENT (AMPS)
8
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
TJ = 125°C
1 100 100°C
0.5
0
– 50 – 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
10
0 3 6 9 12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
3Pages MMSF4P01HD
di/dt = 300 A/µs
Standard Cell Density
trr
High Cell Density
trr
ta tb
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 µs. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(RθJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
100
VGS = 10 V
SINGLE PULSE
10 TC = 25°C
1 ms
10 ms
1 dc
RDS(on) LIMIT
0.1
THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided), 10s max.
0.01
0.1 1
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
6 Motorola TMOS Power MOSFET Transistor Device Data
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ MMSF4P01HD データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMSF4P01HD | SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS | Motorola Semiconductors |
MMSF4P01HD | Power MOSFET ( Transistor ) | ON Semiconductor |