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PDF MMSF3P03HD Data sheet ( Hoja de datos )
| Número de pieza | MMSF3P03HD | |
| Descripción | SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF3P03HD/D
™Designer's Data Sheet
Medium Power Surface Mount Products
TMOS P-Channel
Field Effect Transistors
MiniMOS™ devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
G
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Miniature SO–8 Surface Mount Package — Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25 Ω)
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
DEVICE MARKING
™
D
S
MMSF3P03HD
Motorola Preferred Device
SINGLE TMOS POWER FET
3.0 AMPERES
30 VOLTS
RDS(on) = 0.1 OHM
CASE 751–05, Style 13
SO–8
N–C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Value
VDSS
30
VDGR
30
VGS
± 20
ID 4.6
ID 3.0
IDM 50
PD 2.5
– 55 to 150
EAS
567
RθJA
TL
50
260
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
mJ
°C/W
°C
S3P03
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMSF3P03HDR2
13″
12 mm embossed tape
2500 units
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
© MMoototroorlao,lIancT. 1M99O6S Power MOSFET Transistor Device Data
1
1 page  
12
10
8 VDS
QT
VGS
24
20
16
6
4 Q1
Q2
ID = 3 A
TJ = 25°C
12
8
2 Q3
4
00
0 5 10 15 20 25 30 35
QT, TOTAL CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
1000
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
MMSF3P03HD
100
10
1
td(off)
tf
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
3
VGS = 0 V
2.5 TJ = 25°C
2
1.5
1
0.5
0
0.5 0.6 0.7 0.8 0.9 1
1.1 1.2 1.3
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
5
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