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MMSF10N03Z の電気的特性と機能

MMSF10N03ZのメーカーはMotorola Semiconductorsです、この部品の機能は「SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMSF10N03Z
部品説明 SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




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MMSF10N03Z Datasheet, MMSF10N03Z PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N03Z/D
Advance Information
Medium Power Surface Mount Products
TMOS Single N-Channel with
MMSF10N03Z
Motorola Preferred Device
Monolithic Zener ESD Protected Gate
EZFETsare an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 200 V Machine Model and 2000 V Human Body Model D
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
G
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
S
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 mW
CASE 751–05, Style 12
SO–8
Source
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
Symbol
Max
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C (1)
Drain Current — Continuous @ TA = 70°C (1)
Drain Current — Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25°C (1)
Linear Derating Factor @ TA = 25°C (1)
Total Power Dissipation @ TA = 25°C (2)
Linear Derating Factor @ TA = 25°C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
W(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 )
THERMAL RESISTANCE
VDSS
VDGR
VGS
ID
ID
IDM
PD
PD
TJ, Tstg
EAS
30
30
± 20
10
7.7
50
2.5
20
1.6
12
– 55 to 150
1000
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
mJ
Junction–to–Ambient (1)
Junction–to–Ambient (2)
Parameter
Symbol
RqJA
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
Typ
Max Unit
50 °C/W
80
S10N3Z
Device
MMSF10N03ZR2
Reel Size
13
Tape Width
12 mm embossed tape
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Quantity
2500 units
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1

1 Page





MMSF10N03Z pdf, ピン配列
TYPICAL ELECTRICAL CHARACTERISTICS
MMSF10N03Z
20
10 V
4.5 V
16
3.1 V
VGS = 2.7 V
TJ = 25°C
20
VDS 10 V
15
12
2.5 V
8.0
2.3 V
4.0
2.1 V
1.9 V
0
0 0.5 1.0 1.5 2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
10
25°C
TJ = 100°C
5.0
– 55°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 10 A
TJ = 25°C
2.0 4.0 6.0 8.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
10
0.020
TJ = 25°C
0.015
0.010
4.5 V
VGS = 10 V
0.005
0
0 5.0 10 15 20
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.0
VGS = 10 V
1.5 ID = 5.0 A
1.0
0.5
0
– 50 – 25
0 25 50 75 100
TJ, JUNCTION TEMPERATURE (°C)
125
Figure 5. On–Resistance Variation with
Temperature
150
10,000
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
1.0
25°C
0.1
0.01
0
4.0 8.0 12 16
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
20
Motorola TMOS Power MOSFET Transistor Device Data
3


3Pages


MMSF10N03Z 電子部品, 半導体
MMSF10N03Z
di/dt = 300 A/µs
Standard Cell Density
trr
High Cell Density
trr
ta tb
t, TIME
Figure 11. Reverse Recovery Time (trr)
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance – Gen-
eral Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10 µs. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(RθJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
100
100 mS
10
1.0 ms
1.0 VGS = 10 V
SINGLE PULSE
TC = 25°C
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0
dc
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
1000
VDS = 30 V
800
VGS = 10 V
IL = 10 Apk
L = 20 mH
600
400
200
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
6 Motorola TMOS Power MOSFET Transistor Device Data

6 Page



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部品番号部品説明メーカ
MMSF10N03Z

SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS

Motorola Semiconductors
Motorola Semiconductors


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