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MMBTA92LT1 の電気的特性と機能

MMBTA92LT1のメーカーはLeshan Radio Companyです、この部品の機能は「High Voltage Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBTA92LT1
部品説明 High Voltage Transistor
メーカ Leshan Radio Company
ロゴ Leshan Radio Company ロゴ 




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MMBTA92LT1 Datasheet, MMBTA92LT1 PDF,ピン配置, 機能
LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
2
EMITTER
Value
Symbol MMBTA92 MMBTA93 Unit
Collector–Emitter Voltage
V CEO
–300
–200 Vdc
Collector–Base Voltage
V CBO
–300
–200 Vdc
Emitter–Base Voltage
V EBO
–5.0 Vdc
Collector Current — Continuous I C
–500
mAdc
MMBTA92LT1
MMBTA93LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBTA92LT1 = 2D, MMBTA93LT1 = 2E
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = –1.0 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CB = –200Vdc, I E = 0)
( V CB = –160Vdc, I E = 0)
Collector Cutoff Current
( V CB = –3.0Vdc, I C = 0)
MMBTA92
MMBTA93
MMBTA92
MMBTA93
MMBTA92
MMBTA93
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I EBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Min
–300
–200
–300
–200
–5.0
Max Unit
–0.25
–0.25
–0.1
Vdc
Vdc
Vdc
nAdc
µAdc
M32–1/3

1 Page





MMBTA92LT1 pdf, ピン配列
LESHAN RADIO COMPANY, LTD.
MMBTA92LT1 MMBTA93LT1
150
T J = +125°C
100
+25°C
70
50 –55°C
V CE = –10 Vdc
30
20
15
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20 –30 –50 –80 –100
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
50
C ib
20
10
5.0
2.0
1.0
–0.1 –0.2 –0.5 –1.0 –2.0
–5.0 –10 –20
C cb
–50 –100 –200 –500 –1000
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
–1.0
100
80 T J = 25°C
V CE = –20 Vdc
60
40
30
20
0
–1.0
–2.0
–5.0
–10
–20
–50 –100
I C , COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
–0.8
V BE @ V CE = –10 V
–0.6
–0.4
–0.2
V CE(sat) @ I C /I B = 10 mA
0
–1.0
–2.0
–5.0
–10
–20
–50
I C , COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
–100
M32–3/3


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共有リンク

Link :


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