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PDF MMBTA70LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA70LT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA70LT1/D
General Purpose Transistor
PNP Silicon
COLLECTOR
3
MMBTA70LT1
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
VCEO
VEBO
IC
–40
–4.0
–100
Vdc
Vdc
mAdc
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
RθJA
TJ, Tstg
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Max
225
1.8
556
300
2.4
417
– 55 to +150
Min Max
–40 —
–4.0 —
— –100
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
Vdc
Vdc
nAdc
40 400
— –0.25
—
Vdc
125 —
— 4.0
MHz
pF
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
0.7
0.5
D = 0.5
MMBTA70LT1
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
FIGURE 19
DUTY CYCLE, D = t1/t2
P(pk) D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1 READ TIME AT t1 (SEE AN–569)
t2
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
5.0 10 20 50 100 200
t, TIME (ms)
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 17. Thermal Response
104
VCC = 30 V
103
102
ICEO
101 ICBO
AND
100 ICEX @ VBE(off) = 3.0 V
10–1
10–2
–4 –2
00
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 18. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
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| PDF Descargar | [ Datasheet MMBTA70LT1.PDF ] | |
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