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PDF MMBTA63 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA63 | |
| Descripción | PNP SURFACE MOUNT DARLINGTON TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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MMBTA63 / MMBTA64
PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Types Available
(MMBTA13 /MMBTA14)
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe). Terminal Connections: See Diagram
• MMBTA63 Marking K2E, K3E See Page 3
• MMBTA64 Marking K3E See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
A
C
TOP VIEW
BC
BE
ED
G
H
K
J
D
L
C
BE
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
TJ, TSTG
Value
-30
-30
-10
-500
300
417
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Symbol Min
Max
V(BR)CEO
ICBO
IEBO
-30
⎯
⎯
⎯
-100
-100
MMBTA63
MMBTA64
MMBTA63
MMBTA64
hFE
VCE(SAT)
VBE(SAT)
5,000
10,000
10,000
20,000
⎯
⎯
⎯
-1.5
-2.0
fT 125 ⎯
Unit Test Condition
V IC = -100μA VBE = 0V
nA VCB = -30V, IE = 0
nA VEB = -10V, IC = 0
IC = -10mA, VCE = -5.0V
⎯
IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V
V IC = -100mA, IB = -100μA
V IC = -100mA, VCE = -5.0V
MHz
VCE = -5.0V, IC = -10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30055 Rev. 8 - 2
1 of 3
www.diodes.com
MMBTA63 / MMBTA64
© Diodes Incorporated
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