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PDF MMBTA56LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA56LT1 | |
| Descripción | Driver Transistors | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBTA55LT1/D
Driver Transistors
PNP Silicon
COLLECTOR
3
1
BASE
MMBTA55LT1
MMBTA56LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
2
EMITTER
MMBTA55 MMBTA56
–60 –80
–60 –80
–4.0
–500
Unit
Vdc
Vdc
Vdc
mAdc
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
417
–55 to +150
°C/W
°C
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
Collector Cutoff Current (VCE = –60 Vdc, IB = 0)
Collector Cutoff Current (VCB = –60 Vdc, IE = 0)
Collector Cutoff Current (VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS
MMBTA55
MMBTA56
MMBTA55
MMBTA56
V(BR)CEO –60 — Vdc
–80 —
V(BR)EBO –4.0 — Vdc
ICES
— –0.1 µAdc
ICBO
— –0.1 µAdc
— –0.1
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc)
DC Current Gain (IC = –100 mAdc, VCE = –1.0 Vdc)
hFE 100
100
—
—
—
Collector – Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc)
VCE(sat)
VBE(on)
—
—
–0.25
–1.2
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(4)
(IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz)
fT 50 — MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBTA56LT1.PDF ] | |
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