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MMBTA56 の電気的特性と機能

MMBTA56のメーカーはFairchildです、この部品の機能は「PNP General Purpose Amplifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBTA56
部品説明 PNP General Purpose Amplifier
メーカ Fairchild
ロゴ Fairchild ロゴ 




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MMBTA56 Datasheet, MMBTA56 PDF,ピン配置, 機能
February 2015
MMBTA56 / PZTA56
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from process 73.
C
E
SOT-23
Mark: 2G
B
Figure 1. MMBTA56 Device Package
C
SOT-223
E
C
B
Figure 2. PZTA56 Device Package
Ordering Information
Part Number
MMBTA56
PZTA56
Marking
2G
A56
Package
SOT-23 3L
SOT-223 4L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCES
VCBO
VEBO
IC
TJ , TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Value
-80
-80
-4.0
-500
-55 to +150
Unit
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4
www.fairchildsemi.com

1 Page





MMBTA56 pdf, ピン配列
Typical Performance Characteristics
3 00
VCE = 1V
2 50
200 125 °C
1 50
25 °C
1 00
- 40 °C
50
0.001
0 .01
0.1
I C - COLLECTOR CURRENT (A)
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
0.8
β = 10
0.6
0.4
25 °C
0.2 - 40 °C
125 °C
0
10 100
I C - COLLECTOR CURRE NT (mA)
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
1.2
β = 10
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
10
100
I C - COLLECTOR CURRE NT (mA)
1 00 0
Figure 5. Base-Emitter Saturation Voltage vs.
Collector Current
1.2
V CE = 1V
1
0.8
- 40 °C
0.6 25 °C
0.4 125 °C
0.2
0
0.1 1 10 100
I C - COLLECTOR CURRENT (mA)
1000
Figure 6. Base-Emitter On Voltage vs.
Collector Current
10
V CB= 60V
1
0.1
0.01
0.001
25
50 75 100
TA- AMBIENT TEMPERATURE (º C)
125
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
f = 1.0 MHz
100
C ib
Cob
0.1 1 10 100
V CE - COLLECTOR VOLTAGE (V)
Figure 8. Input and Output Capacitance
vs. Reverse Voltage
© 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4
3
www.fairchildsemi.com


3Pages


MMBTA56 電子部品, 半導体
Physical Dimensions (Continued)
Figure 13. MOLDED PACKAGING, SOT-223, 4-LEAD
© 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4
6
www.fairchildsemi.com

6 Page



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