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PDF MMBT6427 Data sheet ( Hoja de datos )
| Número de pieza | MMBT6427 | |
| Descripción | NPN SURFACE MOUNT DARLINGTON TRANSISTOR | |
| Fabricantes | Diodes Incorporated | |
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MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• High Current Gain
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 4)
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Solderable per MIL-STD-202, Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Terminal Connections: See Diagram
• Marking (See Page 3): K1D
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
A
C
BC
B TOP VIEW E
ED
G
H
K
J
C
L
BE
M
SOT-23
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α 0° 8°
All Dimensions in mm
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
VCBO
VCEO
VEBO
IC
Value
40
40
12
500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 2) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Symbol Min Max Unit
Test Condition
V(BR)CBO
40
⎯
V IC = 100μA, IE = 0
V(BR)CEO
40
⎯
V IC = 10mA, IB = 0
V(BR)EBO
12
⎯
V IE = 10μA, IC = 0
ICBO
⎯
50
nA VCB = 30V, IE = 0
ICEO
⎯
1.0
μA VCE = 25V, IB = 0
IEBO
⎯
50
nA VEB = 10V, IC = 0
hFE
VCE(SAT)
VBE(SAT)
VBE(ON)
10,000
20,000
14,000
⎯
⎯
⎯
100,000
200,000
140,000
1.2
1.5
2.0
1.75
IC = 10mA, VCE = 5.0V
⎯ IC = 100mA, VCE = 5.0V
IC = 500mA, VCE = 5.0V
V IC = 50mA, IB = 0.5mA
IC = 500mA, IB = 0.5mA
V IC = 500mA, IB = 0.5mA
V IC = 50mA, VCE =5.0V
Cobo
Cibo
8.0 Typical
15 Typical
pF VCB = 10V, f = 1.0MHz, IE = 0
pF VEB = 0.5V, f = 1.0MHz, IC = 0
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30048 Rev. 9 - 2
1 of 3
www.diodes.com
MMBT6427
© Diodes Incorporated
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