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Datasheet MMBT2907 PDF ( 特性, スペック, ピン接続図 )

部品番号 MMBT2907
部品説明 Surface mount Si-Epitaxial PlanarTransistors
メーカ Diotec
ロゴ Diotec ロゴ 
プレビュー
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MMBT2907 Datasheet, MMBT2907 PDF,ピン配置, 機能
MMBT2907 / MMBT2907A
MMBT2907 / MMBT2907A
PNP
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2015-05-12
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1.1+0.1
-0.2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
12
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBT2907 MMBT2907A
40 V
60 V
60 V
5V
250 mW 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 0.1 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 1 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 10 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 500 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 150 mA, - VCE = 10 V
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
MMBT2907
MMBT2907A
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
75 –
50 –
100 –
75 –
100 –
30 –
50 –
100 – 300
– – 0.4 V
– – 1.6 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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