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MMBT2369AのメーカーはFairchildです、この部品の機能は「NPN Switching Transistor」です。 |
部品番号 | MMBT2369A |
| |
部品説明 | NPN Switching Transistor | ||
メーカ | Fairchild | ||
ロゴ | |||
このページの下部にプレビューとMMBT2369Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
November 2014
MMBT2369A
NPN Switching Transistor
Description
This device is designed for high speed saturated
switching at collector currents of 10 mA to 100 mA.
Sourced from process 21.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
MMBT2369A
Marking
1S
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
40
4.5
200
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
www.fairchildsemi.com
1 Page Typical Performance Characteristics
20 0
VCE = 1.0V
15 0
125 ° C
10 0
25 ° C
50
- 40 °C
0 .0 1
0.1 1 10
I C - COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
vs. Collector Current
10 0
1.4
β = 10
1.2
1
- 40 °C
0.8
0.6 25 °C
0.4 125 °C
0.1 1
10 100 300
I C - COLLE CTOR CURRENT ( mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
600
V CB= 20V
100
10
1
25 50 75 100 125
TA - AMBIENT TE MPERATURE (°C)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
150
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1 - 40 °C
125 °C
0
0.1 1
10 100 500
I C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs. Collector Current
1
- 40°C
0.8 25 °C
125 °C
0.6
0.4 V CE= 1.0V
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs. Collector Current
100
5
4 C ibo
3
C obo
2
F = 1.0MHz
1
0
0.1 0.5 1
5 10
REVERSE BIAS VOLTAGE (V)
Figure 6. Output Capacitance vs.
Reverse Bias Voltage
50
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
3
www.fairchildsemi.com
3Pages Physical Dimensions
2.92±0.20
3
0.95
1.40
1.30+-00..1250
2.20
(0.29)
1
0.95
1.90
1.20 MAX
(0.93)
C
GAGE PLANE
0.23
0.08
0.20 MIN
(0.55)
2
0.60
0.37
0.20
AB
1.90
LAND PATTERN
RECOMMENDATION
1.00
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
0.25
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
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