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Datasheet MMBT2369A PDF ( 特性, スペック, ピン接続図 )

部品番号 MMBT2369A
部品説明 NPN Switching Transistor
メーカ Fairchild
ロゴ Fairchild ロゴ 
プレビュー
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MMBT2369A Datasheet, MMBT2369A PDF,ピン配置, 機能
November 2014
MMBT2369A
NPN Switching Transistor
Description
This device is designed for high speed saturated
switching at collector currents of 10 mA to 100 mA.
Sourced from process 21.
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
MMBT2369A
Marking
1S
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
40
4.5
200
-55 to +150
V
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
www.fairchildsemi.com

1 Page



MMBT2369A pdf, ピン配列
Typical Performance Characteristics
20 0
VCE = 1.0V
15 0
125 ° C
10 0
25 ° C
50
- 40 °C
0 .0 1
0.1 1 10
I C - COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
vs. Collector Current
10 0
1.4
β = 10
1.2
1
- 40 °C
0.8
0.6 25 °C
0.4 125 °C
0.1 1
10 100 300
I C - COLLE CTOR CURRENT ( mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
600
V CB= 20V
100
10
1
25 50 75 100 125
TA - AMBIENT TE MPERATURE (°C)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
150
0.5
β = 10
0.4
0.3
25 °C
0.2
0.1 - 40 °C
125 °C
0
0.1 1
10 100 500
I C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs. Collector Current
1
- 40°C
0.8 25 °C
125 °C
0.6
0.4 V CE= 1.0V
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs. Collector Current
100
5
4 C ibo
3
C obo
2
F = 1.0MHz
1
0
0.1 0.5 1
5 10
REVERSE BIAS VOLTAGE (V)
Figure 6. Output Capacitance vs.
Reverse Bias Voltage
50
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
3
www.fairchildsemi.com


3Pages


MMBT2369A 電子部品, 半導体
Physical Dimensions
2.92±0.20
3
0.95
1.40
1.30+-00..1250
2.20
(0.29)
1
0.95
1.90
1.20 MAX
(0.93)
C
GAGE PLANE
0.23
0.08
0.20 MIN
(0.55)
2
0.60
0.37
0.20
AB
1.90
LAND PATTERN
RECOMMENDATION
1.00
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
0.25
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
© 1997 Fairchild Semiconductor Corporation
MMBT2369A Rev. 1.1.0
6
www.fairchildsemi.com

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