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PDF MMBT2222AWT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222AWT1 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222AWT1/D
Preliminary Information
General Purpose Transistor
NPN Silicon
MMBT2222AWT1
Motorola Preferred Device
These transistors are designed for general purpose amplifier applica-
tions. They are housed in the SOT–323/SC–70 package which is
designed for low power surface mount applications.
COLLECTOR
3
1
BASE
3
1
2
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT2222AWT1 = 1P
Symbol
VCEO
VCBO
VEBO
IC
Value
40
75
6.0
600
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
TJ, Tstg
Max
150
833
– 55 to +150
Unit
mW
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
CASE 419 – 02, STYLE 3
SOT– 323/SC – 70
Min Max Unit
40 — Vdc
75 — Vdc
6.0 — Vdc
— 20 nAdc
— 10 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222AWT1.PDF ] | |
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