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PDF MMBT2222ALT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222ALT1 | |
| Descripción | General Purpose Transistors | |
| Fabricantes | ON | |
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
VCEO
Value
30
40
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MMBT2222LT1
60
MMBT2222ALT1
75
Emitter −Base Voltage
VEBO
Vdc
MMBT2222LT1
5.0
MMBT2222ALT1
6.0
Collector Current − Continuous
THERMAL CHARACTERISTICS
IC 600 mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 6
1
Publication Order Number:
MMBT2222LT1/D
1 page  
MMBT2222LT1, MMBT2222ALT1
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
Figure 10. Current−Gain Bandwidth Product
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 11. “On” Voltages
+0.5
0 RqVC for VCE(sat)
−0.5
−1.0
−1.5
−2.0 RqVB for VBE
−2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
ORDERING INFORMATION
Device
MMBT2222LT1
Specific Marking Code
M1B
Package
SOT−23
Shipping†
3000 / Tape & Reel
MMBT2222LT1G
M1B
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBT2222ALT1
1P
SOT−23
3000 / Tape & Reel
MMBT2222ALT1G
1P
SOT−23
3000 / Tape & Reel
(Pb−Free)
MMBT2222LT3
M1B
SOT−23
10,000 / Tape & Reel
MMBT2222LT3G
M1B
SOT−23
(Pb−Free)
10,000 / Tape & Reel
MMBT2222ALT3
1P
SOT−23
10,000 / Tape & Reel
MMBT2222ALT3G
1P
SOT−23
10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet MMBT2222ALT1.PDF ] | |
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