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Datasheet MMBT200 PDF ( 特性, スペック, ピン接続図 )

部品番号 MMBT200
部品説明 PNP General Purpose Amplifier
メーカ Fairchild
ロゴ Fairchild ロゴ 
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MMBT200 Datasheet, MMBT200 PDF,ピン配置, 機能
Discrete POWER & Signal
Technologies
PN200
PN200A
MMBT200
MMBT200A
C
C
BE
TO-92
SOT-23
Mark: N2 / N2A
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN200A
625
5.0
83.3
200
*MMBT200A
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

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MMBT200 pdf, ピン配列
Typical Characteristics (continued)
PNP General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8 - 40 ºC
0.6
25 °C
125 ºC
0.4
0.2
0
0.1 1 10 100 300
I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs. Ambient Temperature
100
V CB= 50V
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE (º C)
125
Collector Saturation Region
4
Ta = 25°C
3
2 Ic =
100 uA
50 mA
300 mA
1
0
100 300 700 2000 4000
I B- BASE CURRENT (uA)
Base Emitter ON Voltage vs
Collector Current
1
0.8
- 40 ºC
0.6
0.4
25 °C
125 ºC
0.2
0
0.1
VCE = 5V
1 10 100 200
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
95
90
85
80
75
70
0.1
1 10 100
RESISTANCE (k)
1000
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
10
Cib
Cob
0.1 1
10 100
Vce- COLLECTOR VOLTAGE(V)


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