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PDF MMBD110T1 Data sheet ( Hoja de datos )

Número de pieza MMBD110T1
Descripción Schottky Barrier Diodes
Fabricantes Motorola Semiconductors 
Logotipo Motorola Semiconductors Logotipo



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No Preview Available ! MMBD110T1 Hoja de datos, Descripción, Manual

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high–efficiency UHF and
VHF detector applications. Readily available to many other fast switching RF
and digital applications. They are housed in the SOT–323/SC–70 package
which is designed for low–power surface mount applications.
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
Order this document
BY MMBD110T1/D
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419A–02, STYLE 2
SOT-323/SC–70
MAXIMUM RATINGS
Reverse Voltage
Rating
Forward Power Dissipation
TA = 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD110T1 = 4M
MMBD330T1 = 4T
MMBD770T1 = 5H
MMBD110T1
MMBD330T1
MMBD770T1
Symbol
VR
PF
TJ
Tstg
Value
7.0
30
70
120
– 55 to +125
– 55 to +150
Unit
Vdc
mW
°C
°C
Thermal Clad is a registered trademark of the Bergquist Company.
©MMotootorroollaa, SInmc. 1a9ll96Signal Transistors, FETs and Diodes Device Data
1

1 page




MMBD110T1 pdf
2.0
MMBD770T1
1.6
1.2
MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD770T1
f = 1.0 MHz
500
MMBD770T1
400
KRAKAUER METHOD
300
0.8 200
0.4 100
0
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Total Capacitance
0
0 10 20 30 40 50 60 70 80 90 100
IF, FORWARD CURRENT (mA)
Figure 11. Minority Carrier Lifetime
10
MMBD770T1
1.0 TA = 100°C
TA = 75°C
0.1
0.01 TA = 25°C
0.001
0
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Reverse Leakage
100
MMBD770T1
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
0.1
50 0.2 0.4 0.8 1.2 1.6
VF, FORWARD VOLTAGE (VOLTS)
Figure 13. Forward Voltage
2.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5

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