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PDF MCR100 Data sheet ( Hoja de datos )
| Número de pieza | MCR100 | |
| Descripción | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MCR100 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices designed for high volume, line-powered consumer applications such
as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and
sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package
which is readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Trigger Current — 200 µA Maximum
• Low Reverse and Forward Blocking Current — 100 µA Maximum, TC = 125°C
• Low Holding Current — 5 mA Maximum
• Glass-Passivated Surface for Reliability and Uniformity
Order this document
by MCR100/D
MCR100
Series*
*Motorola preferred devices
SCRs
0.8 AMPERE RMS
100 thru 600 VOLTS
G
AK
K
G
A
CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, RGK = 1 kΩ
MCR100-3
MCR100-4
MCR100-6
MCR100-8
Symbol
VDRM
and
VRRM
Value
100
200
400
600
Unit
Volts
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
IT(RMS)
0.8
Amps
Peak Forward Surge Current, TA = 25°C
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
10
0.415
Amps
A2s
Peak Gate Power — Forward, TA = 25°C
Average Gate Power — Forward, TA = 25°C
Peak Gate Current — Forward, TA = 25°C
(300 µs, 120 PPS)
PGM
PGF(AV)
IGFM
0.1
0.01
1
Watts
Watt
Amp
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated VRRM and VDRM
Storage Temperature Range
tLead Solder Temperature
( 1/16I from case, 10 s max)
VGRM
TJ
Tstg
—
5
–40 to +125
–40 to +150
+230
Volts
°C
°C
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MCR100.PDF ] | |
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