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PDF MA2C719 Data sheet ( Hoja de datos )

Número de pieza MA2C719
Descripción Silicon epitaxial planar type
Fabricantes Panasonic 
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Schottky Barrier Diodes (SBD)
MA2C719
Silicon epitaxial planar type
For high-frequency rectification
I Features
DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500
mA) condition
Allowing high-density mounting (5 mm pitch insertion)
Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
High rectification efficiency caused by its low forward-rise-
voltage (VF)
High reliability achieved by the glass sealed package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
VR
VRRM
IFM
IF(AV)
40
40
1
500
V
V
A
mA
Non-repetitive peak forward
surge current*
IFSM
30
A
Junction temperature
Storage temperature
Tj 125
Tstg 55 to +125
°C
°C
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
φ 0.45 max.
COLORED BAND
INDICATES
CATHODE
1
Unit : mm
1st Band
2nd Band
2
φ 1.75 max.
1 : Cathode
2 : Annde
JEDEC : DO-34
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
IR VR = 35 V
100 µA
Forward voltage (DC)
VF IF = 500 mA
0.55 V
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
60 pF
Reverse recovery time*
trr IF = IR = 100 mA
Irr = 10 mA, RL = 100
5 ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 400 MHz
3. * : trr measuring instrument
I Cathode Indication
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
Rs = 50
W.F.Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Color
1st Band 2nd Band
Silver
Silver
1

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