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PDF VTE3324LA Data sheet ( Hoja de datos )
| Número de pieza | VTE3324LA | |
| Descripción | GaAs Infrared Emitting Diodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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GaAs Infrared Emitting Diodes VTE3322LA, 24LA
Long T-1 Plastic Package — 940 nm
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 50A LONG T-1
CHIP SIZE: .011" X .011"
This narrow beam angle, 3 mm diameter plastic packages, GaAs, 940 nm emitter is suitable for use in optical switch applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
-40°C to 100°C
100 mW
1.43 mW/°C
50 mA
0.71 mA/°C
3A
-.8%/°C
5.0V
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.
10 µA
940 nm
14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Part Number
VTE3322LA
VTE3324LA
Output
Irradiance
Ee
mW/cm2
Min. Typ.
1.0 1.3
2.0 2.6
Condition
distance Diameter
mm
10.16
10.16
mm
2.1
2.1
Radiant
Intensity
Total Power
Test
Current
Ie
mW/sr
Min.
1.0
2.0
PO IFT
mW mA
Typ. (Pulsed)
1.5 20
2.5 20
Forward Drop
VF
@ IFT
Volts
Typ. Max.
1.25 1.6
1.25 1.6
Half Power Beam
Angle
θ1/2
Typ.
±10°
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
128
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