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PDF VTD34F Data sheet ( Hoja de datos )
| Número de pieza | VTD34F | |
| Descripción | Alternate Source/ Second Source Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
| Logotipo |  |
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Alternate Source/
Second Source Photodiodes
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package material filters out visible light
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
Re
VOC
TC VOC
ID
CJ
tR/tF
SR
λrange
λp
VBR
θ1/2
NEP
D*
Responsivity
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Junction Capacitance
Rise/Fall Time @ 1 kΩ Lead
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp.-50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
TEST CONDITIONS
0.5 mW/cm2, 940 nm
0.5 mW/cm2, 940 nm
2850 K
H = 0, VR = 10 V
@ 1 MHz, VR = 0 V
VR = 10 V, 833 nm
@ Peak
Min.
15
275
725
40
VTD34F
Typ.
350
-2.0
2
60
50
0.60
940
±50
4.8 x 10-14
5.7 x 1012
UNITS
Max.
µA
mV
mV/°C
30 nA
pF
nsec
A/W
1150 nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
74
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