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PDF VTB8341 Data sheet ( Hoja de datos )

Número de pieza VTB8341
Descripción VTB Process Photodiodes
Fabricantes PerkinElmer Optoelectronics　
Logotipo PerkinElmer Optoelectronics Logotipo



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No Preview Available ! VTB8341 Hoja de datos, Descripción, Manual

VTB Process Photodiodes
VTB8341
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 11 CERAMIC
CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes have very
high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
VTB8341
Min. Typ. Max.
35 60
.12 .23
490
-2.0
100
1.4
-8.0
1.0
.10
320 1100
920
2 40
±60
2.4 x 10-14 (Typ.)
9.7 x 10 12 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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