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S21MD4VのメーカーはSharp Electrionic Componentsです、この部品の機能は「Built-in Zero-cross Circuit/ High Noise Resistance Type Phototriac Coupler」です。 |
部品番号 | S21MD4V |
| |
部品説明 | Built-in Zero-cross Circuit/ High Noise Resistance Type Phototriac Coupler | ||
メーカ | Sharp Electrionic Components | ||
ロゴ | |||
このページの下部にプレビューとS21MD4Vダウンロード(pdfファイル)リンクがあります。 Total 4 pages
S21MD4V
S21MD4V
Built-in Zero-cross Circuit, High Noise
Resistance Type Phototriac Coupler
..g Lead forming type of S21MD4V is also available. (S21MD4W )
gg TUV ( DIN-VDE0884 ) approved type is also available as an option.
s Features
s Outline Dimensions
( Unit : mm)
1. Built-in zero-cross circuit
2. High critical rate of rise of OFF-state volt-
age ( dV/dt : MIN. 100V/ µs )
3. High repetitive peak OFF-state voltage
( VDRM : MIN. 600V )
4. Isolation voltage between input and output
Viso : 5 000Vrms
5. UL recognized, file No. E64380 ( S21MD4V/ S21MD4W)
g S21MD4V is for 200V line
s Applications
1. For triggering medium/high power triac
2.54± 0.25
65
4
Internal connection
diagram
6 54
S21MD4V
Zero-cross
circuit
123
Anode
mark
0.9± 0.2
1.2± 0.3
7.12±0.5
1 23
7.62± 0.3
1 Anode
2 Cathode
3 NC
4 Anode/
Cathode
5 No external
connection
6 Anode/
Cathode
0.5±0.1
0.26± 0.1
θ : 0 to 13 ˚
θ
s Absolute Maximum Ratings
Parameter
Input
Output
Forward current
Reverse voltage
RMS ON-state current
∗1Peak one cycle surge current
Repetitive peak OFF-state voltage
∗2Isolation voltage
Operating temperature
Storage temperature
∗3Soldering temperature
∗1 Sine wave
∗2 40 to 60% RH, AC for 1 minute, f = 60HZ
∗3 For 10 seconds
Symbol
IF
VR
IT
I surge
V DRM
Viso
T opr
T stg
T sol
( Ta = 25˚C)
Rating
50
6
100
1.2
600
5 000
- 30 to + 100
- 55 to + 125
260
Unit
mA
V
mA rms
A
V
Vrms
˚C
˚C
˚C
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
1 Page Fig. 5 Relative Repetitive Peak OFF-state
Voltage vs. Ambient Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 7 Holding Current vs.
Ambient Temperature
10
5
V D = 6V
2
1
0.5
0.2
0.1
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient Temperature
10- 5
5 V DRM = Rated
2
10- 6
5
2
10- 7
5
2
10- 8
5
2
10- 9
5
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
S21MD4
Fig. 6 ON-state Voltage vs.
Ambient Temperature
2.0
IT = 100mA
1.9
1.8
1.7
1.6
1.5
1.4
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
Fig. 8 Repetitive Peak OFF-state Current vs.
OFF-state Voltage
2
T a = 25˚C
10- 7
5
2
10- 8
5
100 200 300 400 500
OFF-state voltage V D (V)
Fig.10 Zero-cross Voltage vs.
Ambient Temperature
R load
IF = 15mA
25
600
20
15
- 30
0 20 40 60 80
Ambient temperature T a (˚C)
100
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ S21MD4V データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
S21MD4TV | High Noise-resistance Type Phototriac Coupler | Sharp Electrionic Components |
S21MD4V | Built-in Zero-cross Circuit/ High Noise Resistance Type Phototriac Coupler | Sharp Electrionic Components |