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S1T2410B01-D0B0 の電気的特性と機能

S1T2410B01-D0B0のメーカーはSamsung semiconductorです、この部品の機能は「bipolar integrated circuit designed as a telephone bell replacement」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1T2410B01-D0B0
部品説明 bipolar integrated circuit designed as a telephone bell replacement
メーカ Samsung semiconductor
ロゴ Samsung semiconductor ロゴ 




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S1T2410B01-D0B0 Datasheet, S1T2410B01-D0B0 PDF,ピン配置, 機能
TONE RINGER
S1T2410B01/B02
INTRODUCTION
The S1T2410B01/B02 is a bipolar integrated circuit designed as a
telephone bell replacement.
8DIP300
FUNCTIONS
• Two oscillators
• Output amplifier
• Power supply control circuit
FEATURES
• Designed for telephone bell replacement
• Low drain current
• Small size MINIDIP package
• Adjustable 2-frequency tone
• Adjustable warbling rate
• Built-in hysteresis prevents false triggering and rotary dial CHIRPS’
• Extension tone ringer modules
• Alarms or other alerting devices
• External triggering or ringer disable (S1T2410B01)
• Adjustable for reduced initial supply current (S1T2410B02)
ORDERING INFORMATION
Device
S1T2410B01-D0B0
S1T2410B02-D0B0
Package
8-DIP-300
Operating Temperature
45°C to +65°C
1

1 Page





S1T2410B01-D0B0 pdf, ピン配列
TONE RINGER
S1T2410B01/B02
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
(All voltage referenced to GND unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Operating Voltage
Initiation Voltage1
VCC
VSI See Fig. 1
17
Initiation Current1
ISI S1T2410B02 -6.8K-Pin 2 to GND 1.4
Sustaining Voltage2
VSUS
See Fig. 1
9.7
Sustaining Current2
ISUS
No Load VCC = VSUS, See Fig. 1 0.7
Trigger Voltage3
VTRG
S1T2410B01 Only VCC = 15V
9.0
Trigger Current3
ITRG
S1T2410B01 Only
10.0
Disable Voltage4
VDIS
S1T2410B01 Only
Disable Current4
IDIS S1T2410B01 Only
40
Output Voltage High
VOH VCC = 21V, I8 = 15mA
Pin 6 = 6V, Pin 7 = GND
17.0
Output Voltage Low
VOL VCC = 21V, I8 = 15mA
Pin 6 = GND, Pin 7 = 6V
Input Current 1 (Pin 3)
Input Current 2 (Pin 7)
High Frequency 1
II (PIN 3)
II (PIN 7)
fH1
Pin 3 = 6V, Pin 4 = GND
Pin 7 = 6V, Pin 6 = GND
R3 = 191K, C3 = 6800pF
461
High Frequency 2
fH2 R3 = 191K, C3 = 6800pF
576
Low Frequency
fL R2 = 165K, C2 = 0.47µF
9.0
Typ.
19
2.5
11.0
1.4
10.5
20.0
50
19.0
512
640
10
NOTES: (see electrical characteristics sheet)
1. Initial supply voltage (VSI) is the supply voltage required to start tone ringer oscillation
2. Sustaining voltage (VSUS) is the supply voltage required to maintain oscillation.
3. VTR and ITR are the conditions applied to trigger to start oscillation for VSUS VCC VSI
4. VDIS and lDIS are the conditions applied to trigger to inhibit oscillation for VSI VCC
5. Trigger current must be limited to this value externally.
Max.
29.0
21
4.2
12.0
2.5
12.0
10005
0.8
21.0
1.6
500
500
563
704
11.0
Unit
V
V
mA
V
mA
V
µA
V
µA
V
V
nA
nA
Hz
Hz
Hz
3


3Pages


S1T2410B01-D0B0 電子部品, 半導体
S1T2410B01/B02
TONE RINGER
APPLICATION CIRCUIT 1 (S1T2410B01)
TIP
C1 R1
0.9uF 560
_
+
1
RING
C4
22uF/35V
2
100K — 200K
D1
29V
R2
165K+1%
3
4
C2
0.47uF+5%
1
2
3
4
8 C5
0.22uF
7
R3
6
191K+1%
C3
5 6.8nF+5%
100K
VOLUME
SPEAKER
1300: 8
Figure 3. S1T2410B01 Application Circuit
APPLICATION CIRCUIT 2 (S1T2410B02)
TIP
C1 R1
0.9uF 560
_
+
RING
RSL
C4
1
2
29V
3
R2
4
165K+1%
S1T2410B02
8
C5
0.22uF
7
R3
6
191K+1%
C3
5 6.8nF+5%
C2
0.47uF+5%
100K
VOLUME
SPEAKER
1300: 8
Figure 4. S1T2410B02 Application Circuit
6

6 Page



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部品番号部品説明メーカ
S1T2410B01-D0B0

bipolar integrated circuit designed as a telephone bell replacement

Samsung semiconductor
Samsung semiconductor
S1T2410B01-D0B0

bipolar integrated circuit designed as telephone bell replacement

Samsung semiconductor
Samsung semiconductor


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