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S1P2655A01 の電気的特性と機能

S1P2655A01のメーカーはSamsung semiconductorです、この部品の機能は「LINEAR INTEGRATED CIRCUIT」です。


製品の詳細 ( Datasheet PDF )

部品番号 S1P2655A01
部品説明 LINEAR INTEGRATED CIRCUIT
メーカ Samsung semiconductor
ロゴ Samsung semiconductor ロゴ 




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S1P2655A01 Datasheet, S1P2655A01 PDF,ピン配置, 機能
LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS
16DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04
and S1P2655A05 are comprised of saven high voltage, high
current NPN darlington transistors arrays with common emitter,
open collector outputs. Suppression diodes are included for
inductive load driving and the inputs are pinned opposite the
outputs to simplify board layout. Peak inrush currents to 600mA
permit them to drive incandescent lamps.
The S1P2655A01 is a general purpose array for use with DTL,
16SOP
TTL, PMOS or CMOS logic directly.
The S1P2655A02 version does away with the need for any
external discrete resistors, since each usit has a resistor and a
zener diode in series with the input. The S1P2655A02 is
designed for use with 14 to 25V PMOS devices. The zener
diode also gives these devices excellent noise immunity.
The S1P2655A03 has a series base resistor to each darlington
pair, and thus allows operation directly with TTL or CMOS oper-
ating at supply voltages of 5V. The S1P2655A03 will handle
numberous interfaces needs-particularly those beyond the
capailities of standard logic buffers.
The S1P2655A04 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operat-
ing supply voltage of 6V to 15V.
The S1P2655A05 is designed for use with standard TTL and Schottky TTL, with which hinger output currents are
required and loading of the logic output is not a concern.
These devices will sink a minimum of 350mA when driven from a totempolelogic output.
These versatile devices are useful for driving a wide range of loads including Solenoids, Relays, DC motors, LED
displays, Filament lamps, thermal printheads and high power buffer. Applications requiriing sink currents beyonds
the capability of a single output may be accomodated by paralleling the outputs.
APPLICATIONS
• Relay driver
• DC motor driver
• Solenoids driver
• LED display driver
• Filament lamp driver
• High power buffer
• Thermal print head driver
1

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S1P2655A01 pdf, ピン配列
LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
ELECTRICAL CHARACTERISTICS
(Ta = 25°C, unless otherwise noted)
Characteristic
Symbol
Test Condition
Output Leakage Current
Output Saturation Voltage
Input Current 1 (Off Condition)
Input Current 2 (On Condition)
Input Voltage
DC Current Gain
Input Capacitance
Proparation Delay Time
Clamp Diode Leakage Current
ILK
Vsat
IIN 1
IIN 2
VIN
hFE
CIN
tON
tOFF
IR
VCE = 50V, Ta = 25°C, VIN = open
VCE = 50V, Ta = 70°C, VIN = open
VCE = 50V, Ta = 70°C,
VIN = 6.0V (S1P2655A02)
VCE = 50V, Ta = 70°C,
VIN = 1.0V (S1P2655A04)
IC = 100mA, IIN = 250µA
IC = 200mA, IIN = 350µA
IC = 350mA, IIN = 500µA
IC = 500mA, Ta = 70°C
VIN = 17V (S1P2655A02), Vo = open
VIN = 3.85V (S1P2655A03), Vo = open
VIN = 5V (S1P2655A04), Vo = open
VIN = 12V (S1P2655A04), Vo = open
VIN = 3.0V (S1P2655A05), Vo = open
VCE = 2.0V, Ic = 300mA (S1P2655A02)
VCE = 2.0V, Ic = 200mA (S1P2655A03)
VCE = 2.0V, Ic = 250mA (S1P2655A03)
VCE = 2.0V, Ic = 300mA (S1P2655A03)
VCE = 2.0V, Ic = 125mA (S1P2655A04)
VCE = 2.0V, Ic = 200mA (S1P2655A04)
VCE = 2.0V, Ic = 275mA (S1P2655A04)
VCE = 2.0V, Ic = 350mA (S1P2655A04)
VCE = 2.0V, Ic = 350mA (S1P2655A05)
VCE = 2.0V, Ic = 350mA (S1P2655A05)
0.5 VIN to 0.5 Vo
0.5 VIN to 0.5 Vo
VIN = open, Vo = GND, VR = 50V, Ta =
25°C
VIN = open, Vo = GND, VR = 50V, Ta =
70°C
Clamp Diode Forward Voltage VF IF = 350mA
Min. Typ. Max.
− − 50
100
− − 500
− − 500
−−
50
1000
0.9
1.1
1.25
65
0.85
0.93
0.35
1.0
1.5
15
0.25
0.25
1.1
1.3
1.6
1.3
1.35
0.5
1.45
2.4
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
2.4
30
1.0
1.0
− − 50
− − 100
1.7 2.0
Unit
µA
V
µA
mA
V
pF
µs
µs
µA
µA
V
3


3Pages


S1P2655A01 電子部品, 半導体
S1P2655A01/02/03/04/05
LINEAR INTEGRATED CIRCUIT
TYPICAL APPLICATIONS
PMOS TO LOAD
S1P2655A02
TTL TO LOAD
S1P2655A03/05
1
2
3
4
5
PMOS
OUTPUT
6
7
8
+V
16
15
14
13
12
11
10
9
Figure 7.
Buffer for High-current Load
S1P2655A04
1
2
3
4
5
CMOS
OUTPUT
6
7
8
16
15
14
13
12
11
10
9
+V
+V
1 16
2 15
3 14
TTL
OUTPUT
4
5
13
12
6 11
7 10
89
LAMP
TEST
Figure 8.
USE of Pull-up Resistors to Increase Drive Current
S1P2655A03
+VCC
1
2
3
4
5
6
OUTPUT
7
8
+V
16
15
14
13
12
11
10
9
Figure 9.
Figure 10.
6

6 Page



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部品番号部品説明メーカ
S1P2655A01

LINEAR INTEGRATED CIRCUIT

Samsung semiconductor
Samsung semiconductor
S1P2655A02

LINEAR INTEGRATED CIRCUIT

Samsung semiconductor
Samsung semiconductor
S1P2655A03

LINEAR INTEGRATED CIRCUIT

Samsung semiconductor
Samsung semiconductor
S1P2655A04

LINEAR INTEGRATED CIRCUIT

Samsung semiconductor
Samsung semiconductor


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