DataSheet.jp

S1A2206D01 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 S1A2206D01
部品説明 4.6W AUDIO POWER AMP
メーカ Samsung semiconductor
ロゴ Samsung semiconductor ロゴ 

Total 6 pages
		

No Preview Available !

S1A2206D01 Datasheet, S1A2206D01 PDF,ピン配置, 機能
4.6W AUDIO POWER AMP
S1A2206D01
INTRODUCTION
The S1A2206D01 is a monolithic integrated circuit consisting of a 2-
channel power amplifier. It is suitable for the stereo and bridge ampli-
fier application of a radio cassette tape recorder.
12-DIPH-300
FEATURES
• High power output
Stereo : PO = 2.3 W (Typ) at VCC = 9 V, RL = 4
Bridge : PO = 4.7 W (Typ) at VCC = 9 V, RL = 8
• Low switching distortion at high frequency
16-DIP-300A
• Reduced shock noise at the time of power on/off due to a built-in
muting circuit
• Good ripple rejection due to a built-in ripple filter
• Good channel separation
• Soft tone at the time of output saturation
• Closed loop voltage gain fixed at 45dB (Bridge : 51 dB) but availability with external resistor added
• Minimum number of external parts required
• Easy-to-design radiator fin
ORDERING INFORMATION
Device
S1A2206D01-H0B0
S1A2206D01-D0B0
Package
12-DIPH-300
16-DIP-300A
Operating Temperature
20°C + 70°C
1

1 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ S1A2206D01.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
S1A2206D01

There is a function of 4.6W AUDIO POWER AMP.

Samsung semiconductor
Samsung semiconductor
S1A2206D01-D0B0

There is a function of 4.6W AUDIO POWER AMP.

Samsung semiconductor
Samsung semiconductor
S1A2206D01-H0B0

There is a function of 4.6W AUDIO POWER AMP.

Samsung semiconductor
Samsung semiconductor

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap