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PDF S186P Data sheet ( Hoja de datos )
| Número de pieza | S186P | |
| Descripción | Silicon PIN Photodiode | |
| Fabricantes | Vishay Telefunken | |
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Silicon PIN Photodiode
Description
S186P is a high speed and high sensitive PIN photo-
diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
yGaAs or GaAs on GaAlAs IR emitters (l p 900 nm).
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle
Features
D Fast response times
D Small junction capacitance
D High radiant sensitivity
D Large radiant sensitive area A=7.5 mm2
D Wide angle of half sensitivity ϕ = ± 65°
D Plastic case with IR filter (950 mm)
D Suitable for near infrared radiation
Applications
High speed photo detector
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xTamb 25 °C
xt 5 s
S186P
Vishay Telefunken
94 8490
Symbol
VR
PV
Tj
Tstg
Tsd
RthJA
Value
60
215
100
–55...+100
260
350
Unit
V
mW
°C
°C
°C
K/W
Document Number 81536
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
1 page  
Ozone Depleting Substances Policy Statement
S186P
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81536
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
5 (5)
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet S186P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| S186 | Silicon PIN Photodiode | Vishay Telefunken |
| S186P | Silicon PIN Photodiode | Vishay Telefunken |
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